IPS032G International Rectifier, IPS032G Datasheet
IPS032G
Specifications of IPS032G
Related parts for IPS032G
IPS032G Summary of contents
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... Active clamp Low current & logic level input E.S.D protection Description The IPS031G/IPS032G are fully protected single/dual low side SMART POWER MOSFETs that feature over- current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET ® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments ...
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... Min. Max. — 47 -0.3 7 -10 +10 (1) — 1.4 o C/W) IPS032G — 2 (1) (for ea. mosfet) — 15 (1) — C/W) IPS032G — 1.5 — 4 (Human Body) — 0.5 (Machine Model) -55 150 -40 150 Min. Typ. Max. Units Test Conditions — 100 — 65 — 85 — ...
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... Parameter T on Turn-on delay time T r Rise time T rf Time to 130% final R ds(on) T off Turn-off delay time T f Fall time Q in Total gate charge www.irf.com 5V, rth = 100 C/ 125 C) IPS031G 5V, rth = 85 C/ 125 C) IPS032G Min. Typ — 0 8.1 1 1.6 25 ...
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... A Lead Assignments Lead SOIC IPS031G 4 Min. Typ. — 165 10 14 1.5 2 400 — 300 200 > 165°c I > 1sd Part Number Max. Units Test Conditions o — C See fig See fig 0V 14V — DRAIN sense SOURCE Lead SOIC (Dual) IPS032G www.irf.com ...
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... Appl . Notes to evaluate power dissipation ) Figure 3 - Active clamp waveforms www.irf.com 90 % Vin 10 % Tr-in Tr-in t > T reset t < T reset 90 % Ids Vds Figure rise time & switching time definitions T clamp Rem : V load is negative Figure 4 - Active clamp test circuit IPS031G/IPS032G Td off load + during demagnetization Vin IN Vds Ids tf ...
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... IPS031G/IPS032G All curves are typical values with standard footprints. Operating in the shaded area is not recommended. 100 Figure 5 - Rds Input Voltage ( ton delay 6 rise tim e 5 130% final rdson Figure 7 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs Input Voltage ...
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... Figure 9 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on Resistor ( ) Figure 11 - Current Iimimitation & I shutdown (A) Vs Vin (V) www.irf.com 10000 Figure 10 - Turn-OFF Delay Time & Fall Time (us Isd 25° Ilim 25°C 0 -50 - Figure shutdown (A) Vs Temperature ( o C) IPS031G/IPS032G delay off fall tim Resistor ( ) 100 125 150 7 ...
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... Vs Amb. Temperature ( 100 10 1 Vbat = 14 V Tjini = Figure 15 - Iclamp (A) Vs Inductive Load (mH) SO16 Std. footprint 1 m osfet on SO8 Std. footprint 2 m osfets on 50 100 150 200 IPS032G single pulse 100 Hz rth=100°C/W dT=25°C 1kHz rth=100°C/W dT=25° www.irf.com ...
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... Figure 17 - Input current ( www.irf.com Single pulse C/W) Figure 16b - Transient Thermal Imped Time (s) - IPS032G 120% 115% 110% 105% 100% 95% 90% 85% 80% -50 - Figure 18 - Vin clamp and V clamp2 (%) IPS031G/IPS032G Single pulse rth SO16 std footprint 1 mosfet active rth SO16 std footprint 2 ...
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... IPS031G/IPS032G -50 - Figure 19 - Turn-on, Turn-off, and Treset KI Case Outlines 0.25 [.010 0.25 [.010 NOT ES: 1. DIMENS IONING & T OLERANCING PE R ASME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIME TE RS [INCHES]. 4. OUT LINE CONF ORMS T O JEDEC OUTLINE MS-012AA. ...
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... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 16 -Lead SOIC (narrow body) Data and specifications subject to change without notice. IPS031G/IPS032G 01-6018 01-3064 00 (MS-012AC) 6/11/2001 11 ...