VN06(011Y) STMicroelectronics, VN06(011Y) Datasheet - Page 5

• Manufacturer Part Number: VN06(011Y)
• Description: IC SSR HIGHSIDE PENTAWATT5 HORZ
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VN06(011Y)

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 180 mOhm
• Current - Output / Channel: 1.9A
• Current - Peak Output: 9A
• Voltage - Supply: 5.5 V ~ 26 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: Pentawatt-5 (Horizontal, Bent and Staggered Leads)
• Switch Type: High Side
• Power Switch Family: VN06
• Power Switch On Resistance: 360mOhm
• Output Current: 9A
• Mounting: Through Hole
• Supply Current: 50uA
• Package Type: Pentawatt
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Pin Count: 5 +Tab
• Power Dissipation: 27W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Time Waveforms
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open load conditions in off state as well
as in on state, output shorted to V
overtemperature. The truth table shows input,
diagnostic and output voltage level in normal
operation and in fault conditions.
signals are processed by internal logic. The
open load diagnostic output has a 5 ms filtering.
The filter gives a continuous signal for the fault
condition after an initial delay of about 5 ms. This
means that a disconnection during normal
operation, with a duration of less than 5 ms does
not affect the status output. Equally, any
re-connection of less than 5 ms during a
disconnection duration does not affect the status
output. No delay occur for the status to go low in
case of overtemperature conditions. From the
falling edge of the input signal the status output
initially low in fault condition (over temperature or
open load) will go back with a delay (t
of overtemperature condition and a delay (t
case of open load. These feature fully comply
with
requirement for automotive High Side Driver.
To protect the device against short circuit and
over current conditions, the thermal protection
turns the integrated Power MOS off
minimum
When the temperature returns to 125
switch is automatically turned on again. In short
circuit the protection reacts
delay, the sensor being located in the region of
the die where the heat is generated. Driving
inductive loads,
International
junction
an
Standard
temperature of 140
internal function of the
with
Office
The output
virtually no
povl
)in case
CC
(I.S.O.)
at
o
C the
pol
and
) in
o
C.
a
device ensures the fast demagnetization with a
typical voltage (V
This function allows to greatly reduce the power
dissipation according to the formula:
P
where f = switching frequency and
V
Based on this formula it is possible to know
the value of inductance and/or current to avoid
a thermal shut-down. The maximum inductance
which causes the chip temperature to reach the
shut down temperature in a specific thermal
environment, is infact a function of the load
current for a fixed V
PROTECTING THE DEVICE AGAIST LOAD
DUMP - TEST PULSE 5
The device is able to withstand the test pulse
No. 5 at level II (V
ISO T/R 7637/1
component. This means that all functions of the
device are performed as designed
exposure to disturbance at level II. The VN06 is
able to withstand the test pulse No.5 at level III
adding an external resistor of 150 ohm between
pin 1 and ground plus a filter capacitor of 1000
PROTECTING
REVERSE
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1(GND) and
ground, as shown in the typical application circuit
(fig.3).
The consequences of the voltage drop across
this diode are as follows:
– If the input is pulled to power GND, a negative
– The undervoltage shutdown level is increa-
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board avoiding shift of V
solution allows the use of a standard diode.
F between pin 3 and ground (if R
dem
demag
voltage of -V
thresholds and Vstat are increased by Vf with
respect to power GND).
sed by Vf.
= 0.5 L
= demagnetization voltage
load
BATTERY
f
demag
is seen by the device. (Vil, Vih
(I
THE
load
CC
s
, V
) of -18V.
)
without
2
= 46.5V) according to the
demag
[(V
DEVICE
ih
CC
, V
and f.
+V
il
demag
any
and V
LOAD
)/V
AGAINST
stat
demag
external
20 ).
VN06
. This
after
] f
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