VND05B-11-E STMicroelectronics, VND05B-11-E Datasheet - Page 5

• Manufacturer Part Number: VND05B-11-E
• Description: IC SMART PWR SSR 2CH HEPTAWATT-7
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND05B-11-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 130 mOhm
• Current - Output / Channel: 1.6A
• Current - Peak Output: 9A
• Voltage - Supply: 6 V ~ 26 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: Heptawatt-7 (Horizontal, Bent and Staggered Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FUNCTIONAL DESCRIPTION
The device has a common diagnostic output for
both channels which indicates open load in on-
state, open load in off-state, overtemperature
conditions and stuck-on to V
From the falling edge of the input signal, the status
output, initially low to signal a fault condition
(overtemperature or open load on-state), will go
back to a high state with a different delay in case of
overtemperature (t
(t
discriminate the nature of the detected fault. To
protect the device against short-circuit and
overcurrent condition, the thermal protection turns
the integrated PowerMOS off at a minimum
junction
temperature returns to 125
automatically turned in again. In short-circuit the
protection reacts with virtually no delay, the sensor
(one for each channel) being located inside each
of the two PowerMOS areas. This positioning
allows the device to operate with one channel in
automatic thermal cycling and the other one on a
normal load. An internal function of the devices
ensures the fast demagnetization of inductive
loads with a typical voltage (V
function allows to greatly reduce the power
dissipation according to the formula:
P
where f= switching frequency and
V
Switching Time Waveforms
pol
dem
demag
)
= 0.5 L
respectively.
= demagnetization voltage.
temperature
load
(I
load
povl
)
2
) and in case of open load
This
[(V
of
CC
CC
140
+V
feature
demag
°C
.
demag
°
C.
the switch is
) of -18V. This
)/V
When
allows
demag
] f
this
to
VND05B / VND05B (011Y) / VND05B (012Y)
The maximum inductance which causes the chip
temperature to reach the shutdown temperature in
a specified thermal environment is a function of
the load current for a fixed V
according to the above formula. In this device if the
GND pin is disconnected, with V
16V, both channels will switch off.
PROTECTING
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 2 (GND) and
ground, as shown in the typical application circuit
(fig. 2).
The consequences of the voltage drop across this
diode are as follows:
- If the input is pulled to power GND, a negative
- The undervoltage shutdown level is increased by
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to the device
ground (see application circuit in fig. 3), which
becomes the common signal GND for the whole
control board avoiding shift on V
This solution allows the use of a standard diode.
voltage of -V
thresholds and V
respect to power GND).
V
f
.
f
is seen by the device. (V
THE
STAT
are increased by V
DEVICE
CC
CC
il
, V
, V
not exceeding
ih
demag
and V
AGAINST
and f
il
f
STAT
, V
with
5/11
ih
.