TC649VUA Microchip Technology, TC649VUA Datasheet - Page 13
![IC PWM FAN SPD CONTRLR SD 8-MSOP](/photos/6/59/65932/mfg_150_c04-111_ms_8-msop_sml.jpg)
TC649VUA
Manufacturer Part Number
TC649VUA
Description
IC PWM FAN SPD CONTRLR SD 8-MSOP
Manufacturer
Microchip Technology
Type
Controller - PWM Fanr
Datasheet
1.TC649EUA.pdf
(28 pages)
Specifications of TC649VUA
Applications
Fan Controller, Brushless (BLDC)
Number Of Outputs
1
Voltage - Supply
3 V ~ 5.5 V
Operating Temperature
0°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
Product
Fan / Motor Controllers / Drivers
Operating Supply Voltage
3 V to 5.5 V
Supply Current
1 mA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output
-
Voltage - Load
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TC649VUA
Manufacturer:
MICROCHIP
Quantity:
12 000
Company:
Part Number:
TC649VUATR
Manufacturer:
MICROCHIP
Quantity:
12 000
Table 5-2 gives examples of some commonly available
transistors and MOSFETs. This table should be used
as a guide only since there are many transistors and
MOSFETs which will work just as well as those listed.
The critical issues when choosing a device to use as
Q1 are: (1) the breakdown voltage (V
(MOSFET)) must be large enough to withstand the
highest voltage applied to the fan (Note: This will occur
when the fan is off); (2) 5 mA of base drive current must
FIGURE 5-6:
TABLE 5-2:
MMBT2222A
MPS2222A
MPS6602
SI2302
MGSF1N02E
SI4410
SI2308
Note 1: A series gate resistor may be used in order to control the MOSFET turn-on and turn-off times.
V OUT
2002 Microchip Technology Inc.
Device
a) Single Bipolar Transistor
R
BASE
TRANSISTORS AND MOSFETS FOR Q
Package
SOT-23
SOT-23
SOT-23
SOT-23
TO-92
TO-92
SO-8
Output Drive Transistor Circuit Topologies.
V
GND
Fan
DD
R
Q
SENSE
1
Max. V
(BR)CEO
V
OUT
BE(sat)
(V)
1.2
1.2
1.2
2.5
2.5
4.5
4.5
or V
/V
R
BASE
GS
b) Darlington Transistor Pair
DS
Min. H
NA
NA
NA
NA
50
50
50
be enough to saturate the transistor when conducting
the full fan current (transistor must have sufficient
gain); (3) the V
ficiently drive the gate of the MOSFET to minimize the
R
be within the transistor's/MOSFET's current handling
capability; and (5) power dissipation must be kept
within the limits of the chosen device.
FE
1
DS(on)
Q
(V
V
1
GND
Fan
DD
DD
V
CEO
R
of the device; (4) rated fan current draw must
Q
SENSE
= 5V)
(V)
40
40
40
20
20
30
60
2
/V
DS
OUT
voltage must be high enough to suf-
Fan Current
V
OUT
(mA)
1000
150
150
500
500
500
500
C) N-Channel MOSFET
DS21449C-page 13
TC649
Suggested
R
BASE
V DD
Note 1
Note 1
Note 1
Note 1
GND
Fan
800
800
301
R
Q
( )
SENSE
1