IR3519STRPBF International Rectifier, IR3519STRPBF Datasheet - Page 2

• Manufacturer Part Number: IR3519STRPBF
• Description: IC MOSFET GATE DRIVER SON-8
• Manufacturer: International Rectifier

Specifications of IR3519STRPBF

• Configuration: High and Low Side, Synchronous
• Input Type: PWM
• Delay Time: 15ns
• Current - Peak: 2A
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 35V
• Voltage - Supply: 7V
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Package: 8-Lead SON
• Circuit: X-Phase Phase IC
• Iout (a): 2.0A Gate Driver
• Pbf: PbF Option Available
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings (Referenced to GND)
BOOT Voltage: ................................................ 40 V
PH Voltage: .............. -5V(100ns),-0.3V(DC) to 35 V
UGATE Voltage: ...... -5V(100ns),-0.3V(DC) to 40 V
LGATE Voltage: ......... -5V(100ns),-0.3V(DC) to 8 V
BOOT - PH Voltage: ............................ -0.3V to 8 V
UGATE - PH Voltage: .......................... -0.3V to 8 V
VDD: .................................................................. 8 V
GND: .................................................. -0.3V to 0.3V
All other pins ........................................ -0.3V to 8 V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these or any other conditions beyond those
indicated in the operational sections of the specifications are not implied.
RECOMMENDED OPERATING CONDITIONS
6.5V≤ VDD ≤ 7.5V, 0
ELECTRICAL SPECIFICATIONS
The electrical characteristics involve the spread of values guaranteed within the recommended operating
conditions. Typical values represent the median values, which are related to 25°C. C
(unless otherwise specified).
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Gate Drivers
UGATE Source Resistance
UGATE Sink Resistance
LGATE Source Resistance
LGATE Sink Resistance
UGATE Source Current
UGATE Sink Current
LGATE Source Current
LGATE Sink Current
UGATE Rise Time
UGATE Fall Time
LGATE Rise Time
LGATE Fall Time
PARAMETER
o
C ≤ T
J
≤ 125
o
C
BOOT – PH = 7V. Note 1
BOOT – PH = 7V. Note 1
VDD –GND = 7V. Note 1
VDD – GND = 7V. Note 1
BOOT=7V, UGATE=3.5V,
SW=0V. Note 1
BOOT=7V, UGATE=3.5V,
SW=0V. Note 1
VDD=7V, LGATE=3.5V,
GND=0V. Note 1
VDD=7V, LGATE=3.5V,
GND=0V. Note 1
BOOT – PH = 7V, measure 1V
to 4V transition time.
BOOT - PH = 7V, measure 4V to
1V transition time.
VDD – GND = 7V, Measure 1V
to 4V transition time.
VDD – GND = 7V, Measure 4V
to 1V transition time.
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TEST CONDITION
Operating Junction Temperature .. -10°C to +150
MSL Rating .................................................. Level 2
Reflow Temperature …................................260
Storage Temperature Range .......... -65
ESD Rating ......... HBM Class 1C JEDEC Standard
MIN
TYP
1.0
1.0
1.0
0.4
2.0
2.0
2.0
5.0
UGATE
10
5
5
5
= 3.3nF, C
MAX
2.5
2.5
2.5
1.0
LGATE
IR3519
o
C to 150
UNIT
8/15/08
ns
ns
ns
ns
Ω
Ω
Ω
Ω
A
A
A
A
= 6.8nF
o
C
o
o
C
C