UC3842BVD1G ON Semiconductor, UC3842BVD1G Datasheet - Page 13
UC3842BVD1G
Manufacturer Part Number
UC3842BVD1G
Description
IC CTRLR CURRENT MODE HP 8SOIC
Manufacturer
ON Semiconductor
Datasheet
1.UC3842BDR2G.pdf
(21 pages)
Specifications of UC3842BVD1G
Pwm Type
Current Mode
Number Of Outputs
1
Frequency - Max
275kHz
Duty Cycle
96%
Voltage - Supply
11.5 V ~ 25 V
Buck
No
Boost
Yes
Flyback
Yes
Inverting
No
Doubler
No
Divider
No
Cuk
No
Isolated
Yes
Operating Temperature
-40°C ~ 105°C
Package / Case
8-SOIC (3.9mm Width)
Frequency-max
275kHz
Duty Cycle (max)
96 %
Output Current
1000 mA
Mounting Style
SMD/SMT
Switching Frequency
500 KHz
Maximum Operating Temperature
+ 105 C
Fall Time
50 ns
Minimum Operating Temperature
- 40 C
Rise Time
50 ns
Synchronous Pin
No
Topology
Boost, Flyback, Forward
Number Of Pwm Outputs
1
On/off Pin
No
Adjustable Output
No
Switching Freq
500KHz
Operating Supply Voltage (max)
30V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
UC3842BVD1GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UC3842BVD1G
Manufacturer:
ON Semiconductor
Quantity:
23
+
-
5.0V Ref
Comp/Latch
R
S
Q
Figure 28. MOSFET Parasitic Oscillations
Figure 30. Isolated MOSFET Drive
Series gate resistor R
caused by the MOSFET input capacitance and any series wiring inductance in
the gate-source circuit.
+
-
5.0V Ref
7(12)
Comp/Latch
+
-
V
CC
7(11)
6(10)
5(8)
3(5)
g
R
S
will damp any high frequency parasitic oscillations
C
Q
Boundary
Isolation
R
R
S
7(12)
+
-
N
V
S
CC
Q1
7(11)
6(10)
5(8)
3(5)
R
g
V
N
+
in
0
-
P
I p k +
50% DC
http://onsemi.com
V (Pin1) * 1.4
Q1
R
V
V
in
S
GS
3 R S
Waveforms
+
0
-
13
N S
N p
25% DC
The MCR101 SCR must be selected for a holding of < 0.5 mA @ T
transistor circuit can be used in place of the SCR as shown. All resistors are 10 k.
+
0
-
The totem pole output can furnish negative base current for enhanced
transistor turn-off, with the addition of capacitor C
MCR
101
I
Figure 29. Bipolar Transistor Drive
B
Figure 31. Latched Shutdown
3905
2N
Base Charge
Removal
3903
8(14)
2N
4(7)
2(3)
1(1)
6(10)
5(8)
3(5)
C1
1
.
EA
R
R
+
Q1
A(min)
Osc
R
V
1.0 mA
in
S
Bias
. The simple two
2R
R
5(9)