NCP5212AMNTXG ON Semiconductor, NCP5212AMNTXG Datasheet - Page 7
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NCP5212AMNTXG
Manufacturer Part Number
NCP5212AMNTXG
Description
IC CTLR SYNC SGL STEPDOWN 16-QFN
Manufacturer
ON Semiconductor
Type
Step-Down (Buck)r
Datasheet
1.NCP5212AMNTXG.pdf
(19 pages)
Specifications of NCP5212AMNTXG
Internal Switch(s)
No
Synchronous Rectifier
No
Number Of Outputs
1
Voltage - Output
0.8 ~ 3.3 V
Frequency - Switching
300kHz
Voltage - Input
4.5 ~ 27 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
16-TFQFN Exposed Pad
Output Voltage
0.8 V to 3.3 V
Output Current
35 uA
Input Voltage
4.5 V to 27 V
Supply Current
35 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output
-
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NCP5212AMNTXG
Manufacturer:
ON Semiconductor
Quantity:
12 000
Part Number:
NCP5212AMNTXG
Manufacturer:
ON/安森美
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
OSCILLATOR
OVERCURRENT THRESHOLD
INTERNAL SOFT−START
VOLTAGE ERROR AMPLIFIER
DIFFERENTIAL CURRENT SENSE AMPLIFIER
OVERCURRENT PROTECTION SETTING
2. Guaranteed by design, not tested in production.
Operation Frequency
Total Detection Time
OCSET Detection Time
Soft−Start Time
DC Gain
Unity Gain Bandwidth
Slew Rate
FB Bias Current
Output Voltage Swing
CS+ and CS− Common−mode Input
Signal Range
Input Bias Current
Input Signal Range
Offset Current at IDRP
[(CS+)−(CS−)] to IDRP Gain
Current−Sense Bandwidth
Maximum IDRP Output Voltage
Minimum IDRP Output Voltage
IDRP Output current
Overcurrent Threshold (OCTH)
Detection Current
Ratio of OC Threshold over OCSET
Votlage
OCSET Voltage for Default Fixed OC
Threshold
OCSET Voltage for Adjustable OC
Threshold
OCSET Voltage for OC Disable
Default Fixed OC Threshold
Characteristics
VCSCOM_MAX
VOCSET_DFT
VOCSET_ADJ
V_OCTH_DFT
VOCSET_DIS
(V
(IDRP/((CS+)
IDRP_offset
IDRP_GAIN
GAIN_VEA
IDRP_Max
T_OCDET
K_OCSET
IDRP_Min
Vmax_EA
CS_range
I_OCSET
BW_VEA
Vmin_EA
− (CS−)))
SR_VEA
Ibias_FB
IN
T
Symbol
BW_CS
I_IDRP
CS_IIB
DETECT
F
TSS
= 12 V, V
SW
CC
http://onsemi.com
10 mV, V(IDRP) =
(CS+) − (CS−) = 70 mV, Isource drops
= V
(CS+) – (CS−), Pin OCP is shorted to
(CS+) − (CS−) =
Period of FB shorts to ground before
Sourced from OCP before soft−start,
Rocset = 16.7 kW is connected from
to 95% of the value when V
Rocset w 35 kW is connected from
Rocset = 8.3 ~ 25 kW is connected
Rocset v 2 kW is connected from
CCP
COMP PIN TO GND = 100 pF
V((CS+) − (CS−)) / V_OCSET
At
0.8 V
from OCP to AGND or FB
−
= 5 V, T
OCP to AGND or FB
OCP to AGND or FB
OCP to AGND or FB
(CS+) − (CS−) = 0 V
3dB to DC Gain (Note 2)
Isource_EA = 2 mA
7
Test Conditions
Isink_EA = 2 mA
Refer to AGND
AGND or FB
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
A
0.8 V
SS
=−40°C to 85°C, unless other noted)
T
A
T
A
= −40°C to
85°C
= 25°C
(IDRP)
=
0.475
0.425
−100
1.26
1.09
−1.0
−1.0
21.6
Min
270
−70
200
720
0.9
3.3
2.5
35
0.525
1.92
0.15
Typ
300
1.1
2.5
3.5
0.1
88
15
20
24
40
0
0.575
0.625
Max
2.21
1.47
26.4
330
100
100
600
1.3
0.1
0.3
3.5
1.0
70
35
45
mA/mV
mA/mV
MHz
V/ms
MHz
Unit
kHz
mV
mV
mV
mV
mV
ms
ms
ms
dB
nA
mA
mA
mA
mA
V
V
V
V
V
−