IL610-3E NVE, IL610-3E Datasheet - Page 12

• Manufacturer Part Number: IL610-3E
• Description: ISOLATOR PASSIVE INPUT 8-SOIC
• Manufacturer: NVE
• Series: IsoLoop®r

Specifications of IL610-3E

• Inputs - Side 1/side 2: 1/0
• Number Of Channels: 1
• Isolation Rating: 2500Vrms
• Voltage - Supply: 3 V ~ 5.5 V
• Data Rate: 100Mbps
• Propagation Delay: 12ns
• Output Type: CMOS
• Package / Case: 8-SOIC (3.9mm Width)
• Operating Temperature: -40°C ~ 85°C
• No. Of Channels: 1
• Supply Current: 2mA
• Supply Voltage Range: 3V To 5.5V
• Digital Ic Case Style: SOIC
• No. Of Pins: 8
• Operating Temperature Range: -40°C To +85°C
• Operating: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 390-1077-5; IL610-3E; Q2450046

Two main options for enhancing external magnetic field immunity are shown below.
1. Orientation of the device with respect to the field direction
2. Differential Signaling and Current Boosting.
In all cases driving the coil differentially will result in improved immunity. This is because the logic high state is now driven by an
applied field instead of the zero field as is the case with single ended operation. The more current present in the coil, the more
internal field is generated and the more immunity the device will have to external fields. The device may be safely driven with
±10 mA dc coil current.
Greatest magnetic immunity is achieved by adding the current boost capacitor shown in Figure 5. Very high immunity figures can
be achieved with this method.
Data Rate and Magnetic Field Immunity
In all IL600 series applications it is easier to disrupt an isolated dc signal with an external magnetic field than it is to disrupt an
isolated AC signal. Similarly, a DC magnetic field will have a greater effect on the device than an ac magnetic field of the same
effective magnitude. For example, signals with pulses greater than 100 µs in duration are more susceptible to the effects of
magnetic fields than those where the pulse width is shorter. For input signals greater than 1 MHz, a 1 nF current boost capacitor
will provide as much as 400 Gauss immunity, while the same input capacitor might only provide 70 Gauss of immunity on a
50 kHz signal.
An applied field in the direction of “H1” with respect to the
orientation of the device will result in worst case immunity. In
this case the external field is operating in the same direction as
the applied internal field. In one direction it will tend to help
switching while in the other it will tend to hinder it. This can
result in unpredictable switching due to external magnetic
fields.
An applied field in the direction of “H2” has considerably less
effect on the sensor and will result in significantly higher
immunity levels as shown below.
Method
Field applied in direction H1
Field applied in direction H2
Field applied in any direction but with current
booster capacitor (1 nF) in circuit
Immunity Expected
±20 Gauss
±70 Gauss
±250 Gauss
12
Immunity Description
A DC current of 16 A flowing in a conductor
1 cm away from the device could cause
disturbance
A DC current of 56 A flowing in a conductor
1 cm away from the device could cause
disturbance
A DC current of 200 A flowing in a conductor
1 cm away from the device could cause
disturbance
H2
IL600 Series
H1