SI8420AB-D-IS Silicon Laboratories Inc, SI8420AB-D-IS Datasheet - Page 15
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SI8420AB-D-IS
Manufacturer Part Number
SI8420AB-D-IS
Description
IC ISOLATOR 2CH 5.5V 8-SOIC
Manufacturer
Silicon Laboratories Inc
Series
ISOpror
Datasheet
1.SI8420BB-D-IS.pdf
(30 pages)
Specifications of SI8420AB-D-IS
Number Of Channels
2
Package / Case
8-SOIC (3.9mm Width)
Inputs - Side 1/side 2
2/0
Isolation Rating
2500Vrms
Voltage - Supply
2.7 V ~ 5.5 V
Data Rate
1Mbps
Propagation Delay
35ns
Output Type
Logic
Operating Temperature
-40°C ~ 125°C
Mounting Style
SMD/SMT
Propagation Delay Time
35 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2.7 V
Supply Current
6 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
336-1753-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI8420AB-D-IS
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
Company:
Part Number:
SI8420AB-D-ISR
Manufacturer:
OMRON
Quantity:
2 000
Table 9. IEC 60747-5-2 Insulation Characteristics for Si84xxxB*
Table 10. IEC Safety Limiting Values
Parameter
Maximum Working Insulation Voltage
Input to Output Test Voltage
Transient Overvoltage
Pollution Degree (DIN VDE 0110, Table 1)
Insulation Resistance at T
*Note: Maintenance of the safety data is ensured by protective circuits. The Si84xx provides a climate classification of
Parameter
Case Temperature
Safety input, output, or supply current
Device Power Dissipation
Notes:
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figure 2.
2. The Si841x/2x is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 °C, CL = 15 pF, input a 150 Mbps 50% duty cycle square
40/125/21.
wave.
2
S
, V
IO
= 500 V
1
Symbol
V
V
V
Symbol
IORM
IOTM
R
PR
S
P
T
I
S
S
D
Rev. 1.3
(V
Production Test, t
Partial Discharge < 5 pC)
IORM
Test Condition
JA
T
T
V
Test Condition
J
= 140 °C/W,
A
x 1.875 = V
I
= 150 °C,
= 5.5 V,
Method b1
= 25 °C
t = 60 sec
m
PR
= 1 sec,
, 100%
Min
—
—
—
Si8410/20/21
Characteristic
Typ
—
—
—
1050
4000
>10
560
2
9
Max
150
160
150
V peak
V peak
V peak
Unit
Unit
mW
mA
°C
15