ADUM5230ARWZ Analog Devices Inc, ADUM5230ARWZ Datasheet - Page 13

• Manufacturer Part Number: ADUM5230ARWZ
• Description: IC ISOLATOR 2CH HBRIDGE 16-SOIC
• Manufacturer: Analog Devices Inc
• Series: iCoupler®r

Specifications of ADUM5230ARWZ

• Inputs - Side 1/side 2: 2/0
• Number Of Channels: 2
• Isolation Rating: 2500Vrms
• Voltage - Supply: 4.5 V ~ 5.5 V
• Propagation Delay: 100ns
• Output Type: Logic
• Package / Case: 16-SOIC (0.300", 7.5mm Width)
• Operating Temperature: -40°C ~ 105°C
• Device Type: Half Bridge
• Module Configuration: Half Bridge
• Peak Output Current: 300mA
• Output Resistance: 10ohm
• Input Delay: 100ns
• Output Delay: 100ns
• Supply Voltage Range: 4.5V To 5.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Data Rate: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

The sinusoidal component (at a given frequency) is given by
where:
V
f is the frequency of the sinusoidal.
The transient magnitude of the sinusoidal component is given by
The ability of the ADuM5230 to operate correctly in the pres-
ence of sinusoidal transients is characterized by the data in
Figure 23 and Figure 24. The data is based on design simulation
and is the maximum sinusoidal transient magnitude (2πf V
that the ADuM5230 can tolerate without an operational error.
Values for immunity against sinusoidal transients are not
included in Table 1 because measurements to obtain such values
have not been possible.
0
is the magnitude of the sinusoidal.
Figure 22. Transient Immunity (Linear Transients) vs. Temperature
V
dV
300
250
200
150
100
200
180
160
140
120
100
50
80
60
40
20
CM, sinusoidal
0
0
–40
CM
0
Figure 23. Transient Immunity (Sinusoidal Transients),
/dt = 2πf V
BEST-CASE PROCESS VARIATION
250
–20
WORST-CASE PROCESS VARIATION
= V
500
0
sin(2πft)
27°C Ambient Temperature
0
0
TEMPERATURE (°C)
FREQUENCY (MHz)
750
BEST-CASE PROCESS VARIATION
WORST-CASE PROCESS VARIATION
20
1000
40
1250
60
1500
80
1750
2000
100
0
)
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TYPICAL APPLICATION USAGE
The ADuM5230 is intended for driving low gate capacitance
transistors (200 pF typically). Most high voltage applications
involve larger transistors than this. To accommodate these
applications, users can implement a buffer configuration with
the ADuM5230, as shown in Figure 25. In many cases, the
buffer configuration is the least expensive option and provides
the greatest amount of design flexibility. The precise buffer/high
voltage transistor combination can be selected to fit the needs of
the application.
INSULATION LIFETIME
All insulation structures eventually break down when subjected
to voltage stress over a sufficiently long period. The rate of
insulation degradation depends on the characteristics of the
voltage waveform applied across the insulation. In addition to
the testing performed by the regulatory agencies, Analog
Devices conducts an extensive set of evaluations to determine
the lifetime of the insulation structure within the ADuM5230.
Analog Devices performs accelerated life testing using voltage
levels higher than the rated continuous working voltage.
Acceleration factors for several operating conditions are
determined. These factors allow calculation of the time to
failure at the actual working voltage. Table 7 summarizes the
peak voltages for 50 years of service life for a bipolar ac
operating condition and the maximum Analog Devices
R
GND
R
LOWER
UPPER
1
200
180
160
140
120
100
80
60
40
20
0
0
Figure 24. Transient Immunity (Sinusoidal Transients),
250
BEST-CASE PROCESS VARIATION
V
V
V
V
DD1
ADJ
IA
IB
ADuM5230
500
Figure 25. Application Circuit
100°C Ambient Temperature
GND
GND
750
FREQUENCY (MHz)
V
V
V
WORST-CASE PROCESS VARIATION
V
DDB
ISO
ISO
OB
OA
B
1000
1250
FLOATING V
1500
ADuM5230
DDB
1750
2000
+HV
–HV