SI8441AA-C-IS1 Silicon Laboratories Inc, SI8441AA-C-IS1 Datasheet - Page 16
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SI8441AA-C-IS1
Manufacturer Part Number
SI8441AA-C-IS1
Description
IC ISOLATOR DGTL 4CH 16SOIC
Manufacturer
Silicon Laboratories Inc
Series
ISOpror
Specifications of SI8441AA-C-IS1
Inputs - Side 1/side 2
3/1
Number Of Channels
4
Isolation Rating
1000Vrms
Voltage - Supply
2.7 V ~ 5.5 V
Data Rate
1Mbps
Propagation Delay
35ns
Output Type
Tri-State
Package / Case
16-SOIC (3.9mm Width)
Operating Temperature
-40°C ~ 125°C
Operating Supply Voltage (typ)
3.3/5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI8441AA-C-IS1R
Manufacturer:
MITSUMI
Quantity:
2 122
Part Number:
SI8441AA-C-IS1R
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
Si8440/41/42/45
Table 10. IEC Safety Limiting Values
Table 11. Thermal Characteristics
16
Table 9. IEC 60747-5-2 Insulation Characteristics for Si84xxxB*
Case Temperature
Safety input, output, or
supply current
Device Power
Dissipation
Notes:
Parameter
IC Junction-to-Air Thermal
Resistance
Maximum Working Insulation Voltage
Input to Output Test Voltage
Highest Allowable Overvoltage (Transient
Overvoltage, t
Pollution Degree (DIN VDE 0110, Table 1)
Insulation Resistance at T
*Note: This isolator is suitable for basic electrical isolation only within the safety limit data. Maintenance of the safety data is
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figure 3.
2. The Si844x is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 ºC, CL = 15 pF, input a 150 Mbps 50% duty cycle square
wave.
ensured by protective circuits. The Si84xx provides a climate classification of 40/125/21.
Parameter
2
TR
Parameter
= 10 sec)
Symbol
S
, V
P
T
Symbol
I
S
IO
S
D
JA
= 500 V
V
I
= 5.5 V, T
JA
105 °C/W (NB SOIC-16),
= 100 °C/W (WB SOIC-16),
1
Symbol
Test Condition
Test Condition
V
V
V
IORM
R
PR
TR
J
S
= 150 °C, T
Rev. 1.2
Method a
After Environmental Tests
Subgroup 1
(V
Partial Discharge < 5 pC)
Method b1
(V
Production Test, t
Partial Discharge < 5 pC)
After Input and/or Safety Test
Subgroup 2/3
(V
Partial Discharge < 5 pC)
IORM
IORM
IORM
A
x 1.6 = V
x 1.875 = V
x 1.2 = V
Test Condition
= 25 °C
Min
—
PR
PR
m
Min Typ
, t
PR
, t
—
—
—
= 1 sec,
m
m
, 100%
SOIC-16
= 60 sec,
= 60 sec,
WB
100
—
—
—
Typ
SOIC-16
SOIC-16
WB
150
220
275
Characteristic
105
NB
Max
1050
4000
>10
560
896
672
2
SOIC-16
9
Max
150
210
275
NB
—
V peak
V peak
V peak
ºC/W
Unit
Unit
Unit
mW
mA
°C