SI8452BB-B-IS1 Silicon Laboratories Inc, SI8452BB-B-IS1 Datasheet - Page 16

IC ISOLATOR 5CH 5.5V 16-SOIC

SI8452BB-B-IS1

Manufacturer Part Number
SI8452BB-B-IS1
Description
IC ISOLATOR 5CH 5.5V 16-SOIC
Manufacturer
Silicon Laboratories Inc
Series
ISOpror
Datasheets

Specifications of SI8452BB-B-IS1

Number Of Channels
5
Package / Case
16-SOIC (3.9mm Width)
Inputs - Side 1/side 2
3/2
Isolation Rating
2500Vrms
Voltage - Supply
2.7 V ~ 5.5 V
Data Rate
150Mbps
Propagation Delay
6ns
Output Type
Tri-State
Operating Temperature
-40°C ~ 125°C
Mounting Style
SMD/SMT
Propagation Delay Time
6 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2.7 V
Supply Current
6 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Operating Temperature (max)
125C
Operating Temperature (min)
-40C
Pin Count
16
Mounting
Surface Mount
Package Type
SOIC N
Case Length
9.9mm
Case Height
1.5(Max)mm
Screening Level
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI8452BB-B-IS1
Manufacturer:
Silicon Labs
Quantity:
135
Si8450/51/52/55
Table 9. IEC 60747-5-2 Insulation Characteristics for Si845xxB*
Table 10. IEC Safety Limiting Values
16
Maximum Working Insulation Voltage
Input to Output Test Voltage
Highest Allowable Overvoltage (Transient
Overvoltage, t
Pollution Degree (DIN VDE 0110, Table 1)
Insulation Resistance at T
*Note: This isolator is suitable for basic electrical isolation only within the safety limit data. Maintenance of the safety data is
Case Temperature
Safety input, output, or
supply current
Device Power
Dissipation
Notes:
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figure 3.
2. The Si845x is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 ºC, CL = 15 pF, input a 150 Mbps 50% duty cycle square
ensured by protective circuits. The Si845x provides a climate classification of 40/125/21.
wave.
Parameter
2
TR
Parameter
= 10 sec)
Symbol
S
, V
P
T
I
S
IO
S
D
= 500 V
V
I
= 5.5 V, T
JA
105 °C/W (NB SOIC-16),
= 100 °C/W (WB SOIC-16),
1
Symbol
V
Test Condition
V
V
IORM
R
PR
TR
S
J
= 150 °C, T
Rev. 1.2
(V
(V
After Input and/or Safety Test
(V
IORM
IORM
Production Test, t
After Environmental Tests
Partial Discharge < 5 pC)
Partial Discharge < 5 pC)
Partial Discharge < 5 pC)
IORM
A
x 1.6 = V
x 1.2 = V
Test Condition
= 25 °C
Subgroup 2/3
x 1.875 = V
Subgroup 1
Method b1
Method a
PR
PR
Min Typ
, t
, t
m
m
m
PR
= 1 sec,
= 60 sec,
= 60 sec,
, 100%
SOIC-16
WB
150
220
415
Characteristic
Max
1050
4000
>10
896
672
560
2
SOIC-16
9
150
215
415
NB
Vpeak
Vpeak
Vpeak
Unit
Unit
mW
mA
°C

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