TLP250(TP1,F) Toshiba, TLP250(TP1,F) Datasheet - Page 25

• Manufacturer Part Number: TLP250(TP1,F)
• Description: PHOTOCOUPLER HS TRANS OUT 8-SMD
• Manufacturer: Toshiba

Specifications of TLP250(TP1,F)

• Voltage - Isolation: 2500Vrms
• Number Of Channels: 1, Unidirectional
• Current - Output / Channel: 1.5A
• Propagation Delay High - Low @ If: 150ns @ 8mA
• Current - Dc Forward (if): 20mA
• Input Type: DC
• Output Type: Push-Pull, Totem-Pole
• Mounting Type: Surface Mount
• Package / Case: 8-SMD (300 mil)
• Configuration: 1 Channel
• Isolation Voltage: 2500 Vrms
• Maximum Propagation Delay Time: 500 ns
• Maximum Forward Diode Voltage: 1.8 V
• Minimum Forward Diode Voltage: 2500 Vrms
• Maximum Reverse Diode Voltage: 5 V
• Maximum Forward Diode Current: 20 mA
• Maximum Continuous Output Current: 2 A
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 20 C
• Logic Gate Type: IGBT or MOSFET Power
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TLP250TP1FTR

*Under development. Specifications subject to change without notice. For the latest information, please contact your nearest Toshiba sales representative.
Note 1: The EN60747-5-2 safety standard for compact packages is different from that for standard DIP packages.
Note 2: BSI and IEC: : Approved (supplementary or basic insulation)
Photocouplers for IGBT/MOSFET Gate Drive (Continued)
TLP557
TLP700
TLP700F
TLP700H*
TLP700HF*
TLP701
TLP701F
TLP701A*
TLP701AF*
TLP701H*
TLP701HF*
TLP705
TLP705F
TLP705A*
TLP705AF*
Part Number
Since the mini-flat package is a compact package, please contact your nearest Toshiba sales representative for more details.
TÜV and VDE: : Approved
For the latest information, please contact your nearest Toshiba sales representative.
EN 60065- and IEC 60065-approved, EN 60950- and IEC 60950-approved
EN 60747-5-2-approved with option V4 or D4
Pin Configuration
8
1
6
1
6
1
6
1
6
1
6
1
6
1
6
1
7
2
5
5
5
5
5
5
5
2
2
2
2
2
2
2
: Design which meets safety standard/approval pending as of January 2011
6
3
4
3
4
3
4
3
4
3
4
3
4
3
4
3
5
4
DIP8
Direct drive of a power
transistor
SDIP6
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
SDIP6
T
Direct drive of a
medium-power
IGBT/MOSFET
High CMR
SDIP6
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
SDIP6
T
Direct drive of a
small-power
IGBT/MOSFET
High CMR
SDIP6
Direct drive of a
small-power
IGBT/MOSFET
High speed (250 kHz)
Low power dissipation
SDIP6
Direct drive of a
small-power
IGBT/MOSFET
Low power dissipation
SDIP6
Direct drive of a
small-power
IGBT/MOSFET
High speed
Low power dissipation
opr
opr
= 125°C (max)
= 125°C (max)
Features
: Approved (reinforced insulation)
Delay Time (Max)
Propagation
0.5 μs
0.7 μs
0.7 μs
0.5 μs
0.7 μs
0.2 μs
0.2 μs
5 μs
25
Constant current
output : 0.25 A
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
±0.45 A
Output
±2.0 A
±2.0 A
±0.6 A
±0.6 A
±0.6 A
±0.6 A
: Design which meets safety standard/approval pending as of January 2011
7.5 mA
(Max)
5 mA
5 mA
5 mA
5 mA
5 mA
5 mA
8 mA
I
FHL
2500
Vrms
Vrms
5000
Vrms
Vrms
Vrms
5000
Vrms
Vrms
Vrms
5000
5000
5000
5000
5000
BVs
UL/cUL TÜV
/
/
/
/
/
/
/
/
Safety Standards
VDE
BSI
(2)
IEC