HSSR-7110#100 Avago Technologies US Inc., HSSR-7110#100 Datasheet - Page 10
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HSSR-7110#100
Manufacturer Part Number
HSSR-7110#100
Description
ISOLAT 1.5KVDC 1CH GATE 8SMD BJ
Manufacturer
Avago Technologies US Inc.
Datasheet
1.HSSR-7110600.pdf
(11 pages)
Specifications of HSSR-7110#100
Package / Case
8-SMD Butt Joint
Output Type
Gate Driver
Voltage - Isolation
1500VDC
Number Of Channels
1, Unidirectional
Current - Output / Channel
1.6A
Current - Dc Forward (if)
20mA
Input Type
DC
Mounting Type
Surface Mount
Load Voltage Rating
90 V
Load Current Rating
0.8 A
Contact Form
1 Form A
Output Device
MOSFET
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free by exemption / RoHS compliant by exemption
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Figure 19. Voltage Offset Test Setup.
Figure 20. Burn-In Circuit.
Applications Information
Thermal Model
The steady state thermal model for the HSSR-7110 is
shown in Figure 21. The thermal resistance values given
in this model can be used to calculate the temperatures
at each node for a given operating condition. The thermal
resistances between the LED and other internal nodes
are very large in comparison with the other terms and
are omitted for simplicity. The components do, however,
interact indirectly through θ
thermal resistance. �ll heat generated flows through
θ
The value of θ
design and is, therefore, determined by the designer.
The maximum value for each output MOSFET junction-
to-case thermal resistance is specified as 15�C��. The
thermal resistance from FET driver junction-to-case is also
15�C��. The power dissipation in the FET driver, however,
is negligible in comparison to the MOSFETs.
10
NOTE:
IN ORDER TO DETERMINE V
BE MEASURED FOR THE BURN-IN BOARDS TO BE USED. THEN, KNOWING
CORRECT OUTPUT CURRENT PER FIGURES 2 AND 4 TO INSURE THAT THE DEVICE MEETS THE
DERATING REQUIREMENTS AS SHOWN.
C�
, which raises the case temperature T
I
F
5.5 V
V
IN
C�
+
-
OUT
ISOTHERMAL CHAMBER
depends on the conditions of the board
1
2
3
4
CORRECTLY, THE CASE TO AMBIENT THERMAL IMPEDANCE MUST
200 Ω
R
IN
HSSR-7110
3
4
1
2
HSSR-7110
C�
8
7
6
5
-
, the case-to-ambient
+
V
OS
8
7
6
5
θ
CA
C
, DETERMINE THE
accordingly.
R
1.0 Ω
1.0 Ω
R
OUT
OUT
NANOVOLTMETER
On-Resistance and Rating Curves
The output on-resistance, R
sheet, is the resistance measured across the output
contact when a pulsed current signal (I
applied to the output pins. The use of a pulsed signal (≤
30 ms) implies that each junction temperature is equal
to the ambient and case temperatures. The steadystate
resistance, R
sistance measured across the output contact when a DC
current signal is applied to the output pins for a duration
sufficient to reach thermal equilibrium. R
effects of the temperature rise of each element in the
thermal model. Rating curves are shown in Figures 2 and
4. Figure 2 specifies the maximum average output current
allowable for a given ambient temperature. Figure 4
specifies the output power dissipation allowable for a
given ambient temperature. �bove 55�C (for θ
�) and 107�C (for θ
output current and power dissipation are related by the
expression R
be calculated. Staying within the safe area assures that
the steady-state junction temperatures remain less than
150�C. �s an example, for T
Figure 2 shows that the output current should be limited
to less than 610 m�. � check with Figure 4 shows that
the output power dissipation at T
m�, will be limited to less than 0.35 �. This yields an R
of 0.94 �.
V
DIGITAL
O
(SEE NOTE)
SS
SS
, on the other hand, is the value of the re-
= P
O
C�
Figure 21. Thermal Model.
(max)� (I
T
T
T
T
T
T
T
θ
ALL THERMAL RESISTANCE VALUES ARE IN ˚C/W
je
CA
je
jf1
jf2
jd
C
A
= 40�C��), the maximum allowable
104
= AMBIENT TEMPERATURE (MEASURED 6" AWAY
= CASE TEMPERATURE (MEASURED AT CENTER
= LED JUNCTION TEMPERATURE
= FET DRIVER JUNCTION TEMPERATURE
= FET 1 JUNCTION TEMPERATURE
= FET 2 JUNCTION TEMPERATURE
= CASE-TO-AMBIENT THERMAL RESISTANCE
FROM THE PACKAGE)
OF PACKAGE BOTTOM)
�
O
(max))
ON
= 95�C and θ
T
jf1
, specified in this data
15
�
2
= 95�C and I
T
from which R
C
θ
T
CA
A
O
T
SS
jd
= 800 m�) is
C�
15
includes the
C�
= 80�C��,
O
= 80�C�
SS
= 610
T
jf2
can
15
SS