IL213AT Vishay, IL213AT Datasheet - Page 4

• Manufacturer Part Number: IL213AT
• Description: OPTOCOUPLER PHOTOTRNS 100% 8SOIC
• Manufacturer: Vishay

Specifications of IL213AT

• Mounting Type: Surface Mount
• Isolation Voltage: 4000 Vrms
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 4000Vrms
• Current Transfer Ratio (min): 100% @ 10mA
• Voltage - Output: 30V
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor with Base
• Package / Case: 8-SOIC (3.9mm Width)
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Current Transfer Ratio: 130 %
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 240 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 30V
• Opto Case Style: SOIC
• No. Of Pins: 8
• Approval Bodies: UL1577, DIN EN
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Current Transfer Ratio (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 751-1287-2; IL213ATGITR; IL213ATGITR

IL211AT/ 212AT/ 213AT
Vishay Semiconductors
www.vishay.com
4
iil211at_05
iil211at_06
iil211at_07
Figure 5. Normalized Collector-Base Photocurrent vs. LED
1000
10 -1
.01
10 -2
10 4
10 3
10 2
10 0
100
10 5
10
Figure 6. Collector-Base Photocurrent vs. LED Current
10 1
.1
Figure 7. Collector-Emitter Leakage Current vs.Temp.
10
1
.1
1
.1
.1
-20
Normalized to:
V CB = 9.3 V
I F =10 mA
T A = 25°C
T A = 25°C
V CB = 9.3 V
0
T A - Ambient Temperature - °C
I F - LED Current - mA
1
1
I F - LED Current - mA
20
Current
40
Typical
V CE = 10 V
10
10
60
80
100
100
100
iil211at_08
Figure 9. Typical Switching Characteristics vs. Base Resistance
iil211at_09
iil211at_10
1000
Figure 8. Normalized Saturated HFE vs. Base Current and
100
500
100
Figure 10. Typical Switching Times vs. Load Resistance
1.0
50
10
50
10
2.0
1.5
1.0
0.5
0.0
5
5
1
0.1
10K
1
Vce = 0.4 V
25°C
Input:
I F =10 mA
Pulse width = 100 mS
Duty cycle = 50%
Input:
Pulse width = 100 mS
Duty cycle = 50%
I F =10 mA
Base-emitter resistance, R BE (Ω)
0.5
70°C
(Saturated Operation)
Load resistance RL (KΩ)
50K
Ib - Base Current - µA
50°C
1 0
1
Temperature
100K
5
Normalized to:
100
10
Ib = 20 µA
Vce = 10 V
Ta = 25°C
Document Number 83615
Rev. 1.5, 26-Oct-04
500K
50 100
1000
1M