IL211AT Vishay, IL211AT Datasheet - Page 2

• Manufacturer Part Number: IL211AT
• Description: OPTOCOUPLER PHOTOTRANS 20% 8SOIC
• Manufacturer: Vishay

Specifications of IL211AT

• Mounting Type: Surface Mount
• Isolation Voltage: 4000 Vrms
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 4000Vrms
• Current Transfer Ratio (min): 20% @ 10mA
• Voltage - Output: 30V
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor with Base
• Package / Case: 8-SOIC (3.9mm Width)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor With Base
• Configuration: 1
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Current Transfer Ratio: 50 % (Typ)
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 240 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 30V
• Opto Case Style: SOIC
• No. Of Pins: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Current Transfer Ratio (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 751-1286-2; IL211ATGITR; IL211ATGITR

IL211AT, IL212AT, IL213AT
Vishay Semiconductors
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
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2
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
COUPLER
Isolation test voltage
Total package dissipation
Derate linearly from 25 °C
Storage temperature
Operating temperature
Soldering time
ELECTRICAL CHARACTERISTCS (T
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector dark current
Collector emitter capacitance
COUPLER
Saturation voltage, collector emitter
Isolation test voltage
Capacitance (input to output)
Resistance (input to output)
Collector emitter breakdown voltage
CURRENT TRANSFER RATIO
PARAMETER
Current transfer ratio
SWITCHING CHARACTERISTICS
PARAMETER
Switching time
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
evaluations. Typical values are for information only and are not part of the testing requirements.
For technical questions, contact:
I
I
C
with Base Connection in SOIC-8 Package
F
TEST CONDITION
TEST CONDITION
TEST CONDITION
= 2 mA, R
= 10 mA, V
Optocoupler, Phototransistor Output,
V
V
I
I
I
I
I
F
V
C
C
E
F
V
V
CC
CE
CE
= 10 mA
= 10 mA
R
R
= 10 μA
= 10 μA
= 10 μA
amb
amb
1 s
= 6 V
= 0 V
= 10 V
= 10 V
= 0 V
L
= 25 °C, unless otherwise specified)
TEST CONDITION
CE
= 100 Ω,
LED and detector
= 25 °C, unless otherwise specified)
= 5 V
at 260 °C
IL211AT
IL212AT
IL213AT
PART
PART
PART
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SYMBOL
SYMBOL
SYMBOL
SYMBOL
t
BV
BV
BV
V
on
CTR
CTR
CTR
I
C
V
C
R
C
CEO
CEsat
V
T
I
V
ISO
, t
P
T
R
CEO
ECO
CE
CEO
IO
IO
F
O
amb
ISO
stg
tot
off
MIN.
4000
MIN.
MIN.
100
30
30
20
50
7
- 55 to + 150
- 55 to + 100
VALUE
4000
240
3.2
10
TYP.
TYP.
TYP.
100
130
1.3
0.1
0.5
13
10
50
80
5
3
Document Number: 83615
MAX.
MAX.
MAX.
100
1.5
0.4
Rev. 1.9, 21-Dec-10
50
50
mW/°C
UNIT
V
mW
RMS
°C
°C
s
UNIT
UNIT
UNIT
V
GΩ
μA
pF
nA
pF
pF
RMS
%
%
%
μs
V
V
V
V
V