CNY17-3 Vishay, CNY17-3 Datasheet - Page 2
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CNY17-3
Manufacturer Part Number
CNY17-3
Description
OPTOCOUPLER PHOTOTRANS 200% 6DIP
Manufacturer
Vishay
Specifications of CNY17-3
Mounting Type
Through Hole
Isolation Voltage
5300 Vrms
Number Of Channels
1
Input Type
DC
Voltage - Isolation
5300Vrms
Current Transfer Ratio (min)
34% @ 1mA
Current Transfer Ratio (max)
200% @ 10mA
Voltage - Output
70V
Current - Output / Channel
100mA
Current - Dc Forward (if)
60mA
Vce Saturation (max)
400mV
Output Type
Transistor with Base
Package / Case
6-DIP (0.300", 7.62mm)
Forward Current
60 mA
Maximum Fall Time
14 us
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Maximum Rise Time
3 us
Output Device
Transistor With Base
Configuration
1
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
400 mV
Current Transfer Ratio
200 %
Maximum Forward Diode Voltage
1.65 V
Minimum Forward Diode Voltage
1.25 V
Maximum Collector Current
100 mA
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
60mA
Output Voltage
70V
Opto Case Style
DIP
No. Of Pins
6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1267-5
CNY17-3GI
CNY17-3GI
CNY17-3GI
CNY17-3GI
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Company
Part Number
Manufacturer
Quantity
Price
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389
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Part Number:
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Quantity:
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Part Number:
CNY17-3.SD
Manufacturer:
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Quantity:
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Note
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
Note
T
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
Document Number: 83606
Rev. 1.6, 10-Dec-05
amb
amb
ABSOLUTE MAXIMUM RATINGS
PARAMETER
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector current
Power dissipation
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Isolation thickness between
emitter and detector
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature
Operating temperature
Soldering temperature
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
COUPLER
Collector emitter, saturation voltage
Coupling capacitance
Collector emitter, leakage current
= 25 °C, unless otherwise specified.
= 25 °C, unless otherwise specified.
For technical questions, contact: optocoupler.answers@vishay.com
V
F
V
V
V
V
TEST CONDITION
= 10 mA, I
CE
CB
EB
R
= 0 V, f = 1 MHz
= 5 V, f = 1 MHz
= 5 V, f = 1 MHz
= 5 V, f = 1 MHz
V
I
I
F
R
V
CE
= 60 mA
= 10 mA
R
Output, with Base Connection
max. 10 s, dip soldering: distance to
Optocoupler, Phototransistor
= 10 V
= 6 V
C
V
V
= 2.5 mA
IO
seating plane ≥ 1.5 mm
IO
= 500 V, T
TEST CONDITION
= 500 V, T
t < 1.0 ms
t = 1 s
CNY17-1
CNY17-2
CNY17-3
CNY17-4
amb
PART
amb
= 100 °C
= 25 °C
SYMBOL
V
I
I
I
I
V
C
C
C
CEsat
C
R
R
C
CEO
CEO
CEO
CEO
V
I
BR
R
CE
CB
EB
th
th
F
O
C
SYMBOL
BV
BV
P
T
V
MIN.
T
T
R
R
I
I
amb
diss
ISO
stg
CEO
EBO
C
C
sld
6
IO
IO
Vishay Semiconductors
TYP.
1.25
0.01
0.25
750
500
- 55 to + 150
- 55 to + 100
5.2
6.5
7.5
0.6
25
2
2
5
5
VALUE
≥ 10
≥ 10
5300
≥ 0.4
100
150
175
260
≥ 7
≥ 7
70
50
7
12
11
MAX.
1.65
100
100
0.4
10
50
50
www.vishay.com
CNY17
UNIT
V
mW
mm
mm
mm
mA
mA
°C
°C
°C
RMS
V
V
Ω
Ω
UNIT
K/W
K/W
µA
nA
nA
nA
nA
pF
pF
pF
pF
pF
V
V
V
215