SFH620A-2 Vishay, SFH620A-2 Datasheet - Page 2

OPTOCOUPLER PHOTOTRANS 200% 4DIP

SFH620A-2

Manufacturer Part Number
SFH620A-2
Description
OPTOCOUPLER PHOTOTRANS 200% 4DIP
Manufacturer
Vishay
Datasheets

Specifications of SFH620A-2

Mounting Type
Through Hole
Isolation Voltage
5300 Vrms
Number Of Channels
1
Input Type
AC, DC
Voltage - Isolation
5300Vrms
Current Transfer Ratio (min)
22% @ 1mA
Current Transfer Ratio (max)
200% @ 10mA
Voltage - Output
70V
Current - Output / Channel
50mA
Current - Dc Forward (if)
±60mA
Vce Saturation (max)
400mV
Output Type
Transistor
Package / Case
4-DIP (0.300", 7.62mm)
Forward Current
60 mA
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Transistor
Configuration
1
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
400 mV
Current Transfer Ratio
200 %
Maximum Forward Diode Voltage
1.65 V
Maximum Collector Current
100 mA
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
60mA
Output Voltage
70V
Opto Case Style
DIP
No. Of Pins
4
Approval Bodies
IEC65, IEC950, BS EN60065, BS
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1358-5
SFH620A-2GI
SFH620A-2GI

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SFH620A / SFH6206
Vishay Semiconductors
Absolute Maximum Ratings
T
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
www.vishay.com
2
Reverse voltage
DC Forward current
Surge forward current
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Power dissipation
Isolation test voltage between
emitter and detector, refer to
climate DIN 40046, part 2,
Nov.74
Creepage
Clearance
Insulation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDEO 303, part 1
Isolation resistance
Storage temperature range
Ambient temperature range
Junction temperature
Soldering temperature
amb
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
t
t
V
V
max. 10 s. dip soldering
distance to seating plane
≥ 1.5 mm
p
p
IO
IO
≤ 10 µs
≤ 1.0 ms
= 500 V, T
= 500 V, T
Test condition
Test condition
Test condition
amb
amb
= 25 °C
= 100 °C
Symbol
Symbol
Symbol
P
P
T
I
V
V
V
T
R
R
T
FSM
V
amb
I
I
T
I
diss
diss
ISO
CE
EC
stg
sld
F
C
C
IO
IO
R
j
- 55 to + 150
- 55 to + 100
≥ 10
≥ 10
Value
Value
Value
± 2.5
5300
≥ 7.0
≥ 7.0
≥ 4.0
± 60
100
100
150
175
100
260
6.0
7.0
70
50
12
11
Document Number 83675
Rev. 1.6, 11-May-05
V
Unit
mW
Unit
mW
Unit
mm
mm
mm
mA
mA
mA
°C
°C
°C
°C
RMS
V
A
V
V

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