TCET1103 Vishay, TCET1103 Datasheet - Page 3

OPTOCOUPLER PHOTOTRANS 200% 4DIP

TCET1103

Manufacturer Part Number
TCET1103
Description
OPTOCOUPLER PHOTOTRANS 200% 4DIP
Manufacturer
Vishay
Datasheets

Specifications of TCET1103

Mounting Type
Through Hole
Isolation Voltage
5000 Vrms
Number Of Channels
1
Input Type
DC
Voltage - Isolation
5000Vrms
Current Transfer Ratio (min)
34% @ 1mA
Current Transfer Ratio (max)
200% @ 10mA
Voltage - Output
70V
Current - Output / Channel
50mA
Current - Dc Forward (if)
60mA
Vce Saturation (max)
300mV
Output Type
Transistor
Package / Case
4-DIP (0.300", 7.62mm)
Forward Current
60 mA
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Transistor
Configuration
1
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
300 mV
Current Transfer Ratio
200 %
Maximum Forward Diode Voltage
1.6 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
265 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
50mA
Output Voltage
70V
Opto Case Style
DIP
No. Of Pins
4
Approval Bodies
VDE, CSA, BSI EN
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Coupler
Thermal Characteristics
The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the tem-
peratures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB,
layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics
of Optocouplers Application note.
* For 2 layer FR4 board (4" x 3" x 0.062)
Document Number 83503
Rev. 2.2, 05-Sep-06
Isolation test voltage (RMS)
Operating ambient temperature
range
Storage temperature range
Soldering temperature
LED Power dissipation
Output Power dissipation
Maximum LED junction temperature
Maximum output die junction temperature
Thermal resistance, Junction Emitter to Board
Thermal resistance, Junction Emitter to Case
Thermal resistance, Junction Detector to Board
Thermal resistance, Junction Detector to Case
Thermal resistance, Junction Emitter to Junction Detector
Thermal resistance, Board to Ambient*
Thermal resistance, Case to Ambient*
Parameter
T
19996
JD
θ
DB
Parameter
θ
DC
t = 1 min
2 mm from case t ≤ 10 s
T
T
T
B
C
A
θ
DE
T
θ
θ
A
Test condition
CA
BA
θ
Package
EC
θ
EB
T
JE
at 25 °C
at 25 °C
Test condition
Symbol
TCET1100/TCET1100G
T
V
T
T
amb
ISO
stg
sld
- 40 to + 100
- 55 to + 125
Symbol
Vishay Semiconductors
Value
T
T
5000
P
P
θ
θ
θ
θ
θ
θ
θ
260
jmax
jmax
diss
diss
EC
DB
DC
ED
CA
EB
BA
Value
4041
100
150
125
125
173
149
111
127
173
197
www.vishay.com
V
Unit
RMS
°C
°C
°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Unit
mW
mW
°C
°C
3

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