TCET1600 Vishay, TCET1600 Datasheet - Page 2

• Manufacturer Part Number: TCET1600
• Description: OPTOCPLR PHOTOTRANS 1CH 20% 4DIP
• Manufacturer: Vishay

Specifications of TCET1600

• Mounting Type: Through Hole
• Isolation Voltage: 5000 Vrms
• Number Of Channels: 1
• Input Type: AC, DC
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (min): 20% @ 5mA
• Current Transfer Ratio (max): 300% @ 5mA
• Voltage - Output: 70V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): ±60mA
• Vce Saturation (max): 300mV
• Output Type: Transistor
• Package / Case: 4-DIP
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Configuration: 1
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Current Transfer Ratio: 300 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TCET1600/TCET1600G
Vishay Semiconductors
Note
G = leadform 10.16 mm; G is not marked on the body.
Notes
(1)
(2)
Note
T
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
www.vishay.com
2
amb
ORDER INFORMATION
PART
TCET1600
TCET1600G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
COUPLER
Isolation test voltage (RMS)
Total power dissipation
Operating ambient temperature range
Storage temperature range
Soldering temperature
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Junction capacitance
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector dark current
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to wave profile for soldering conditions for through hole devices (DIP).
amb
= 25 °C, unless otherwise specified.
= 25 °C, unless otherwise specified.
(2)
For technical questions, contact: [e-mail]
Optocoupler, Phototransistor Output,
V
V
I
CE
F
V
CE
TEST CONDITION
R
= 10 mA, I
(1)
= 20 V, I
= 5 V, I
2 mm from case, t ≤ 10 s
= 0 V, f = 1 MHz
I
F
I
I
R
C
E
f = 1 MHz
t
= ± 50 mA
p
L
TEST CONDITION
= 100 µA
= 100 µA
/T = 0.5, t
= 100 Ω
F
F
t
t = 1 min
p
= 10 mA,
C
= 0, E = 0
≤ 10 µs
= 1 mA
p
≤ 10 ms
AC Input
SYMBOL
V
V
V
I
CEO
CEsat
CTR > 20 %, single channel, DIP-4 400 mil spacing
V
C
C
CEO
ECO
f
c
F
k
j
CTR > 20 %, single channel, DIP-4
SYMBOL
MIN.
V
V
T
P
P
V
I
T
I
P
T
70
FSM
V
7
CEO
ECO
CM
amb
I
T
I
T
diss
diss
ISO
C
stg
sld
F
tot
R
j
j
REMARKS
TYP.
1.25
100
0.3
50
- 40 to + 100
- 55 to + 125
VALUE
± 1.5
5000
± 60
100
125
100
150
125
250
260
70
50
6
7
Document Number: 83538
MAX.
100
1.6
0.3
Rev. 1.8, 01-Dec-05
UNIT
V
mW
mW
mW
mA
mA
mA
°C
°C
RMS
°C
°C
°C
V
A
V
V
UNIT
kHz
nA
pF
pF
V
V
V
V