CNY17-1X007 Vishay, CNY17-1X007 Datasheet - Page 6
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CNY17-1X007
Manufacturer Part Number
CNY17-1X007
Description
OPTOCOUPLER PHOTOTRANSISTOR
Manufacturer
Vishay
Datasheet
1.CNY17-1X007.pdf
(8 pages)
Specifications of CNY17-1X007
Number Of Channels
1
Input Type
DC
Voltage - Isolation
5300Vrms
Current Transfer Ratio (min)
40% @ 10mA
Current Transfer Ratio (max)
80% @ 10mA
Voltage - Output
70V
Current - Output / Channel
100mA
Current - Dc Forward (if)
60mA
Vce Saturation (max)
400mV
Output Type
Transistor with Base
Mounting Type
Through Hole
Package / Case
6-DIP (0.300", 7.62mm)
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Phototransistor
Configuration
1 Channel
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
0.4 V
Isolation Voltage
5000 Vrms
Current Transfer Ratio
80 %
Maximum Forward Diode Voltage
1.65 V
Maximum Collector Current
100 mA
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document Number: 81863
Rev. 1.3, 26-Oct-09
Collector Current and Modulation Depth CNY17-1
Collector Current and Modulation Depth CNY17-2
Collector Current and Modulation Depth CNY17-3
icny17_14
icny17_15
icny17_13
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0
Fig. 13 - Saturation Voltage vs.
Fig. 14 - Saturation Voltage vs.
Fig. 15 - Saturation Voltage vs.
1
1
1
I
I
F
F
= 3 x I
= 2 x I
V
V
V
CEsat
CEsat
CEsat
I
F
C
C
= f (I
= f (I
= f (I
= 2 x I
I
I
I
C
C
C
C
C
C
)
)
)
10
10
(mA)
C
(mA)
10
(mA)
For technical questions, contact:
I
Optocoupler, Phototransistor Output,
F
I
I
= 3 x I
F
F
= I
= 3 x I
C
C
C
with Base Connection
100
100
100
optocoupleranswers@vishay.com
Fig. 17 - Permissible Power Dissipation for Transistor and Diode
Collector Current and Modulation Depth CNY17-4
icny17_18
icny17_16
200
150
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
50
0
0
Fig. 16 - Saturation Voltage vs.
0
1
Vishay Semiconductors
V
CEsat
25
P
Diode
= f (I
tot
Transistor
= f (T
I
I
F
C
T
C
= I
)
(mA)
A
50
10
(°C)
C
I
A
I
F
F
)
= 3 x I
= 2 x I
C
C
75
www.vishay.com
CNY17.
100
100
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