H11D2 Vishay, H11D2 Datasheet - Page 2

• Manufacturer Part Number: H11D2
• Description: OPTOCOUPLER PHOTOTRANS 20% 6DIP
• Manufacturer: Vishay

Specifications of H11D2

• Isolation Voltage: 5300 Vrms
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 20% @ 10mA
• Voltage - Output: 300V
• Current - Output / Channel: 100mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor with Base
• Mounting Type: Through Hole
• Package / Case: 6-DIP (0.300", 7.62mm)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor With Base
• Configuration: 1
• Maximum Collector Emitter Voltage: 300 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 300 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 300V
• Opto Case Style: DIP
• No. Of Pins: 6
• Input Current Max: 60mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Transfer Ratio (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: H11D2GI; H11D2GI; H11D2VS

Note
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
Document Number: 83611
Rev. 1.6, 10-Dec-08
amb
ABSOLUTE MAXIMUM RATINGS
PARAMETER
OUTPUT
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
Power dissipation
COUPLER
Isolation test voltage
between emitter and detector
Insulation thickness between emitter
and detector
Creepage distance
Clearance distance
Comparative tracking index
Isolation resistance
Storage temperature range
Operating temperature range
Junction temperature
Soldering temperature
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Reverse voltage
Reverse current
Capacitance
Thermal resistance
= 25 °C, unless otherwise specified.
For technical questions, contact: [e-mail]
per DIN IEC 112/VDE 0303, part 1
max. 10 s, dip soldering: distance
V
TEST CONDITION
V
V
to seating plane ≥ 1.5 mm
R
IO
IO
= 0 V, f = 1 MHz
I
I
TEST CONDITION
= 500 V, T
F
= 500 V, T
R
Output, with Base Connection,
V
= 10 mA
Optocoupler, Phototransistor
R
= 10 µA
= 6 V
High BV
amb
amb
= 100 °C
= 25 °C
CER
PART
Voltage
H11D1, H11D2, H11D3, H11D4
SYMBOL
H11D1
H11D2
H11D3
H11D4
H11D1
H11D2
H11D3
H11D4
PART
R
C
V
V
I
thJA
R
R
O
F
MIN.
SYMBOL
6
V
V
V
V
V
T
P
V
V
V
V
V
T
R
R
T
Vishay Semiconductors
CBO
CBO
CBO
CBO
BEO
amb
I
T
diss
ISO
stg
CE
CE
CE
CE
C
sld
IO
IO
j
TYP.
0.01
750
1.1
25
- 55 to + 150
- 55 to + 100
VALUE
≥ 10
≥ 10
5300
≥ 0.4
300
300
200
200
300
300
200
200
100
300
175
100
260
≥ 7
≥ 7
7
12
11
MAX.
1.5
10
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UNIT
V
mW
mm
mm
mm
mA
°C
°C
°C
°C
RMS
V
V
V
V
V
V
V
V
V
Ω
Ω
UNIT
K/W
µA
pF
V
V
289