TLP281-4(GB,J,F) Toshiba, TLP281-4(GB,J,F) Datasheet - Page 60

PHOTOCPLR QUAD TRANS-OUT 16-SOP

TLP281-4(GB,J,F)

Manufacturer Part Number
TLP281-4(GB,J,F)
Description
PHOTOCPLR QUAD TRANS-OUT 16-SOP
Manufacturer
Toshiba
Datasheets

Specifications of TLP281-4(GB,J,F)

Number Of Channels
4
Input Type
DC
Voltage - Isolation
2500Vrms
Current Transfer Ratio (min)
100% @ 5mA
Current Transfer Ratio (max)
600% @ 5mA
Voltage - Output
80V
Current - Output / Channel
50mA
Current - Dc Forward (if)
50mA
Vce Saturation (max)
400mV
Output Type
Transistor
Mounting Type
Surface Mount
Package / Case
16-SOP
Configuration
4 Channel
Maximum Collector Emitter Voltage
80 V
Maximum Collector Emitter Saturation Voltage
0.4 V
Isolation Voltage
2500 Vrms
Current Transfer Ratio
100 % to 600 %
Maximum Forward Diode Voltage
1.3 V
Minimum Forward Diode Voltage
1 V
Maximum Power Dissipation
170 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Forward Current
10 mA
Maximum Input Diode Current
10 mA
Maximum Reverse Diode Voltage
5 V
Output Device
Phototransistor
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TLP281-4(GB,F)
TLP281-4(GB,F)
TLP281-4(GB,J,F)
TLP281-4GBJF
9
The above operating life data are estimates extrapolated from long-term light output degradation over a single wafer lot and are shown as
reference only. Operating conditions exceeding the maximum ratings are not guaranteed.
10000000
1
1
1000000
100000
10000
140
120
100
140
120
100
GaAs LED Projected Light Output Degradation Data
GaAs LED Projected Operating Life Data
1000
Device Degradation
80
60
40
20
80
60
40
20
100
0
0
1
1
227
2.0
I
I
I
I
I
150
F
F
F
F
F
Failure criteria light output degradation Δ P O < –50%
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
10
10
100
Test conditions: I
Test conditions: I
85
3.0
60
100
100
Test time (h)
Test time (h)
25
F
F
= 50 mA, Ta = 40°C
= 10 mA, Ta = 40°C
0
1000
1000
I
F
4.0
= 10 mA
I
I
I
I
–30
F
F
F
F
= 20 mA
= 30 mA
= 40 mA
= 50 mA
Ambient Temperature (°C)
Projected F50%
operating life
Projected F0.1%
operating life
10000
10000
–50
X-3σ
X-3σ
1 / K (x10
X
X
–73
5.0
100000
100000
-3
)
60
10000000
1000000
100000
10000
140
120
100
1000
80
60
40
20
100
0
1
227
2.0
I
I
I
I
I
150
F
F
F
F
F
Failure criteria light output degradation Δ P O < –30%
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
10
100
Test conditions: I
85
3.0
60
100
Test time (h)
25
F
= 20 mA, Ta = 40°C
0
1000
4.0
I
I
I
I
I
F
F
F
F
F
–30
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
Ambient Temperature (°C)
Projected F50%
operating life
Projected F0.1%
operating life
10000
–50
X-3σ
1 / K (x10
X
–73
5.0
100000
-3
)

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