TLP626-4(F) Toshiba, TLP626-4(F) Datasheet - Page 2
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TLP626-4(F)
Manufacturer Part Number
TLP626-4(F)
Description
PHOTOCPLR DL AC IN TRANOUT 16DIP
Manufacturer
Toshiba
Specifications of TLP626-4(F)
Number Of Channels
4
Input Type
AC, DC
Voltage - Isolation
5000Vrms
Current Transfer Ratio (min)
100% @ ±1mA
Current Transfer Ratio (max)
1200% @ ±1mA
Voltage - Output
55V
Current - Output / Channel
50mA
Current - Dc Forward (if)
50mA
Vce Saturation (max)
400mV
Output Type
Transistor
Mounting Type
Through Hole
Package / Case
16-DIP (0.300", 7.62mm)
Configuration
4 Channel
Maximum Collector Emitter Voltage
55 V
Maximum Collector Emitter Saturation Voltage
400 mV
Isolation Voltage
5000 Vrms
Maximum Forward Diode Voltage
1.3 V
Minimum Forward Diode Voltage
1 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 75 C
Minimum Operating Temperature
- 25 C
Maximum Input Diode Current
50 mA
Output Device
Transistor
Current Transfer Ratio
1200 %
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TLP626-4F
Absolute Maximum Ratings
Recommended Operating Conditions
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation (1 circuit)
Total package power dissipation derating
(Ta ≥ 25°C, 1 circuit)
Isolation voltage
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
(Note 1) Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together.
Supply voltage
Forward current
Collector current
Operating temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
Forward current
Forward current derating
Pulse forward current
Power dissipation (1 circuit)
Power dissipation derating
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Collector current
Collector power dissipation (1 circuit)
Collector power dissipation derating
(Ta ≥ 25°C, 1 circuit)
Junction temperature
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Characteristic
(Ta ≥ 25°C, 1 circuit)
Characteristic
(Ta = 25°C)
Symbol
I
F(RMS)
V
T
I
CC
opr
C
(Note 1)
Min.
−25
―
―
―
2
Typ.
1.6
ΔP
ΔP
―
ΔP
5
1
Symbol
ΔI
V
V
P
BV
T
T
F
I
P
D
CEO
ECO
P
C
P
T
I
I
FP
T
T
stg
opr
sol
C
F
D
C
/ °C
T
j
j
/ °C
/ °C
/ °C
S
Max.
24
20
10
75
−0.7(Ta ≥ 39°C)
TLP626,TLP626-2,TLP626-4
5000(AC, 1min., RH≤60%)
TLP626
Unit
mA
mA
1(100μs pulse,100pps)
°C
−1.0
−1.5
−2.5
100
150
250
V
60
260(10s)
−55~125
−55~100
Rating
125
125
55
50
7
−0.5(Ta ≥ 39°C)
TLP626−2
TLP626−4
−0.7
−1.0
−1.5
100
150
50
70
2007-10-01
mW / °C
mW / °C
mW / °C
mA / °C
V r m s
Unit
mW
mW
mW
mA
mA
°C
°C
°C
°C
°C
A
V
V