4N25(SHORT) Toshiba, 4N25(SHORT) Datasheet

PHOTOCOUPLER TRANS OUT 6-DIP

4N25(SHORT)

Manufacturer Part Number
4N25(SHORT)
Description
PHOTOCOUPLER TRANS OUT 6-DIP
Manufacturer
Toshiba
Datasheets

Specifications of 4N25(SHORT)

Number Of Channels
1
Input Type
DC
Voltage - Isolation
2500Vrms
Current Transfer Ratio (min)
20% @ 10mA
Voltage - Output
70V
Current - Output / Channel
100mA
Current - Dc Forward (if)
80mA
Vce Saturation (max)
500mV
Output Type
Transistor with Base
Mounting Type
Through Hole
Package / Case
6-DIP
No. Of Channels
1
Isolation Voltage
2.5kV
Optocoupler Output Type
Phototransistor
Input Current
10mA
Output Voltage
30V
Opto Case Style
DIP
No. Of Pins
6
Operating Temperature Range
-55°C To
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current Transfer Ratio (max)
-
Other names
4N25SHORT
4N25,4N25A,4N26,4N27,4N28(Short)
TOSHIBA Photocoupler GaAs IRed & Photo−Transistor
4N25(Short),4N25A(Short),4N26(Short),4N27(Short),4N28(Short)
AC Line / Digital Logic Isolator.
Unit in mm
Digital Logic / Digital Logic Isolator.
Telephone Line Receiver.
Twisted Pair Line Receiver
High Frequency Power Supply Feedback Control.
Relay Contact Monitor.
The TOSHIBA 4N25 (Short) through 4N28 (Short) consists of a gallium
arsenide infrared emitting diode coupled with a silicon phototransistor in
a dual in−line package.
l Switching speeds: 3µs (typ.)
l DC current transfer ratio: 100% (typ.)
11
l Isolation resistance: 10
Ω (min.)
l Isolation voltage: 2500Vrms (min.)
l UL recognized: UL1577, file No. E67349
TOSHIBA
11−7A8
Weight: 0.4g
Pin Configurations
(top view)
1
2002-09-25

Related parts for 4N25(SHORT)

4N25(SHORT) Summary of contents

Page 1

... TOSHIBA Photocoupler GaAs IRed & Photo−Transistor 4N25(Short),4N25A(Short),4N26(Short),4N27(Short),4N28(Short) AC Line / Digital Logic Isolator. Digital Logic / Digital Logic Isolator. Telephone Line Receiver. Twisted Pair Line Receiver High Frequency Power Supply Feedback Control. Relay Contact Monitor. The TOSHIBA 4N25 (Short) through 4N28 (Short) consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in− ...

Page 2

Maximum Ratings (Ta = 25°C) Characteristic Forward current (continuous) Forward current derating Peak forward current Power dissipation Power dissipation derating Reverse voltage Collector-emitter voltage Collector-base voltage Emitter-collector voltage Collector current (continuous) Power dissipation Power dissipation derating Storage temperature range Operating ...

Page 3

... V, R.H. ≤ AC, 1 minute S AC, peak BV (*) S AC, 1 second 100 Ω µ 100Ω however, TOSHIBA specifies a minimum Min. Typ. Max. Unit ― 1.15 1.5 V ― ― 100 µA ― 30 ― pF ― 200 ― ― 30 ― ― ― ― ― ― V ― ...

Page 4

4N25,4N25A,4N26,4N27,4N28(Short) 4 2002-09-25 ...

Page 5

4N25,4N25A,4N26,4N27,4N28(Short) 5 2002-09-25 ...

Page 6

4N25,4N25A,4N26,4N27,4N28(Short) 6 2002-09-25 ...

Page 7

... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...

Page 8

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