TLP421(GR-TP1,J) Toshiba, TLP421(GR-TP1,J) Datasheet

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TLP421(GR-TP1,J)

Manufacturer Part Number
TLP421(GR-TP1,J)
Description
PHOTOCOUPLER TRANS-OUT 4-SMD
Manufacturer
Toshiba
Datasheets

Specifications of TLP421(GR-TP1,J)

Number Of Channels
1
Input Type
DC
Voltage - Isolation
5000Vrms
Current Transfer Ratio (min)
50% @ 5mA
Current Transfer Ratio (max)
600% @ 5mA
Voltage - Output
80V
Current - Output / Channel
50mA
Current - Dc Forward (if)
60mA
Output Type
Transistor
Mounting Type
Surface Mount
Package / Case
4-SMD (300 mil)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vce Saturation (max)
-
Other names
TLP421(GR-TP1)
TLP421GRTP1TR
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage Circuits
The TOSHIBA TLP421 consists of a silicone photo−transistor optically
coupled to a gallium arsenide infrared emitting diode in a four lead
plastic DIP (DIP4) with having high isolation voltage
(AC: 5kV
Collector-emitter voltage: 80V (min.)
Current transfer ratio: 50% (min.)
Isolation voltage: 5000V
UL recognized: UL1577
BSI approved: BS EN60065: 2002
SEMKO approved: EN60065, EN60950, EN60335
Rank GB: 100% (min.)
RMS
(min)).
Approved no.8411
BS EN60950-1: 2002
Approved no.8412
Approved no.9910249/01
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
rms
(min.)
TLP421
1
Weight: 0.26 g (typ.)
TOSHIBA
Pin Configurations
(top view)
1
2
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
11−5B2
2007-10-01
4
3
TLP421
Unit in mm

Related parts for TLP421(GR-TP1,J)

TLP421(GR-TP1,J) Summary of contents

Page 1

... Solid State Relays Switching Power Supplies Various Controllers Signal Transmission Between Different Voltage Circuits The TOSHIBA TLP421 consists of a silicone photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5kV (min)) ...

Page 2

Option(D4)type TÜV approved: DIN EN 60747-5-2 Approved no. R9950202 Maximum operating insulation voltage: 890V Maximum permissible overvoltage: 8000V (Note): When a EN 60747-5-2 approved type is needed, please designate the “Option(D4)” Making the VDE application: DIN EN 60747-5-2 • ...

Page 3

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 4

Individual Electrical Characteristics Characteristic Forward voltage Reverse current Capacitance Collector−emitter breakdown voltage Emitter−collector breakdown voltage Collector dark current Capacitance (collector to emitter) Coupled Electrical Characteristics Characteristic Current transfer ratio Saturated CTR Collector−emitter saturation voltage Isolation Characteristics Characteristic Capacitance (input to ...

Page 5

Switching Characteristics Characteristics Rise time Fall time Turn−on time Turn−off time Turn−on time Storage time Turn−off time I F (Ta = 25°C) Symbol Test Condition ...

Page 6

I – 100 − Ambient temperature Ta (℃) I – 3000 1000 100 10 0.001 0.01 0.1 Duty cycle ratio – ...

Page 7

I – = 001 0.001 0.0001 Ambient temperature Ta (℃) I – IF ...

Page 8

I – 100 0 0.1 − Ambient temperature Ta (℃) Switching Time – R 1000 Ta = 25° 16mA ...

Page 9

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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