MT18VDDF12872Y-40BF1 Micron Technology Inc, MT18VDDF12872Y-40BF1 Datasheet - Page 13
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MT18VDDF12872Y-40BF1
Manufacturer Part Number
MT18VDDF12872Y-40BF1
Description
MODULE DDR SDRAM 1GB 184-DIMM
Manufacturer
Micron Technology Inc
Specifications of MT18VDDF12872Y-40BF1
Memory Type
DDR SDRAM
Memory Size
1GB
Speed
400MT/s
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184RDIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
512Mb
Access Time (max)
700ps
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
2.6V
Operating Current
1.8A
Number Of Elements
18
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.5V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1233
MT18VDDF12872Y-40BF1
MT18VDDF12872Y-40BF1
Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 14; notes appear on pages 18–20; 0°C
Table 10: AC Input Operating Conditions
Notes: 1–5, 14, 48; notes appear on pages 18–20; 0°C
pdf: 09005aef80f6b913, source: 09005aef80f6b41c
DDAF18C64_128x72G.fm - Rev. C 9/04 EN
PARAMETER/CONDITION
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT
Any input 0V
1.35V (All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V
OUTPUT LEVELS
High Current (V
Low Current (V
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on V
Voltage on V
Relative to V
Relative to V
Relative to V
OUT
OUT
REF
DD
DD
V
IN
= 0.373V, maximum V
SS
SS
SS
Q Supply
= V
Supply
and Inputs
. . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
V
DD
DD
V
Q - 0.373V, minimum V
, V
OUT
REF
pin 0V
V
DD
Q)
REF
V
IN
, maximum V
REF
Command/
Address, RAS#,
CAS#, WE#, S#,
CKE
CK, CK#
DQ, DQS
SYMBOL
, minimum V
V
V
V
T
REF
IH
IL
A
(
(
AC
(
TT
AC
T
AC
+70°C
A
)
)
)
)
+70°C; V
13
TT
512MB, 1GB (x72, ECC, SR) PC3200
)
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
V
0.49
SYMBOL
Voltage on I/O Pins
Operating Temperature
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Short Circuit Output Current. . . . . . . . . . . . . . . 50mA
V
V
REF
DD
V
IH
V
IL
V
V
I
I
I
Relative to V
T
DDQ
MIN
OH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OZ
OL
, V
REF
(DC)
(DC)
I
DD
TT
X
184-PIN DDR SDRAM RDIMM
+ 0.310
A
I
–
V
DD
(ambient) . . . . . . . . . . . . . . . . . . . . .. 0°C to +70°C
DD
Q = +2.6V ±0.1V
Q
0.49
V
V
REF
REF
-16.8
MIN
16.8
-0.3
-10
2.5
2.5
X
-5
-5
+ 0.15
0.51
- 0.04 V
V
SS
V
REF
DD
MAX
. . . . . . . . . . . . -0.5V to V
Q 0.51
X
- 0.310
–
V
V
DD
V
REF
REF
DD
MAX
Q
2.7
2.7
10
X
+ 0.04
5
5
–
–
- 0.15
©2004 Micron Technology, Inc. All rights reserved.
+ 0.3
V
DD
UNITS
Q
V
V
V
UNITS
mA
mA
µA
µA
V
V
V
V
V
V
12, 25, 35
12, 25, 35
NOTES
DD
32, 36, 39
NOTES
32, 36
33, 34
6
Q +0.5V
6, 39
7, 39
25
25
47
47