MT4VDDT3264HY-40BF2 Micron Technology Inc, MT4VDDT3264HY-40BF2 Datasheet
MT4VDDT3264HY-40BF2
Specifications of MT4VDDT3264HY-40BF2
Related parts for MT4VDDT3264HY-40BF2
MT4VDDT3264HY-40BF2 Summary of contents
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... 400 333 266 – 333 266 – 266 266 – 266 200 t t RCD and RP for -335 modules show 18ns to align with industry specifications; 1 200-Pin SODIMM (MO-224) 1 ≤ +70°C) A ≤ +85°C) A module offerings. 2. Not recommended for new designs RCD RP RC (ns) ...
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... The data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT4VDDT3264HY-40BF2. PDF: 09005aef837131bb/Source: 09005aef8086ea0b dd4c16_32x64h.fm - Rev. E 10/08 EN ...
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Pin Assignments and Descriptions Table 5: Pin Assignments 200-Pin SODIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol 1 Vref 51 Vss 101 3 Vss 53 DQ19 103 5 DQ0 55 ...
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Table 6: Pin Descriptions Symbol A0–A12 BA0, BA1 CK0, CK0#, CK1, CK1# CKE0 DM0–DM7 RAS#, CAS#, WE# S0# SA0–SA2 SCL DQ0–DQ63 DQS0–DQS7 SDA Vdd Vddspd Vref Vss NC PDF: 09005aef837131bb/Source: 09005aef8086ea0b dd4c16_32x64h.fm - Rev. E 10/08 EN 128MB, 256MB (x64, ...
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Figure 2: Functional Block Diagram S0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DM3 DQ24 DQ25 ...
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... SDRAM during READs and by the memory controller during WRITEs. DQS is edge- aligned with data for READs and center-aligned with data for WRITEs. DDR SDRAM modules operate from differential clock inputs (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. ...
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Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions above those indicated in each ...
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... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully designed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system ...
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Idd Specifications Table 9: Idd Specifications and Conditions – 128MB (Die Revision K) Values are for the MT46V16M16 DDR SDRAM only and are computed from values specified in the 256Mb (16 Meg x 16) component data sheet Parameter/Condition Operating one ...
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Table 10: Idd Specifications and Conditions – 128MB (All Other Die Revisions) Values are for the MT46V16M16 DDR SDRAM only and are computed from values specified in the 256Mb (16 Meg x 16) component data sheet Parameter/Condition Operating one bank ...
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Table 11: Idd Specifications and Conditions – 256MB Values are for the MT46V32M16 DDR SDRAM only and are computed from values specified in the 512Mb (32 Meg x 16) component data sheet Parameter/Condition Operating one bank active-precharge current ...
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Serial Presence-Detect Table 12: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage: Iout = 3mA Input leakage current: Vin = GND to ...
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Module Dimensions Figure 3: 200-Pin SODIMM 2.00 (0.078) R (2X) U1 1.80 (0.071) (2X) 6.0 (0.236) TYP 2.0 (0.079) TYP Pin 200 Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted. 2. The dimensional diagram ...