MT18VDDF6472Y-40BK1 Micron Technology Inc, MT18VDDF6472Y-40BK1 Datasheet - Page 14
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MT18VDDF6472Y-40BK1
Manufacturer Part Number
MT18VDDF6472Y-40BK1
Description
MODULE DDR 512MB 200MHZ 184-DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT18VDDF6472Y-40BK1.pdf
(17 pages)
Specifications of MT18VDDF6472Y-40BK1
Memory Type
DDR SDRAM
Memory Size
512MB
Speed
400MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 13:
Table 14:
PDF: 09005aef8074e85b/Source: 09005aef8072fe49
DDF18C64_128x72.fm - Rev. F 9/08 EN
Parameter
Parameter
DC high-level input voltage
DC low-level input voltage
Input voltage (limits)
Input differential-pair cross voltage
Input differential voltage
Input differential voltage
Input current
Dynamic supply current
Dynamic supply current
Dynamic supply current
Input capacitance
Stabilization time
Input clock slew rate
SSC modulation frequency
SSC clock input frequency deviation
PLL loop bandwidth (–3dB from unity gain)
PLL Specifications
CVF857 device or equivalent JESD82-1A
PLL Clock Driver Timing Requirements and Switching Characteristics
Notes:
1. PLL timing and switching specifications are critical for proper operation of the DDR DIMM.
This is a subset of parameters for the specific PLL used. Detailed PLL information is available
in JEDEC Standard JESD82-1A.
512MB, 1GB (x72, ECC, SR) 184-Pin DDR SDRAM RDIMM
Symbol
V
V
I
I
DDPD
I
ID
ID
V
V
V
DDQ
ADD
C
V
I
(
(
IH
IN
IX
IN
IL
I
DC
AC
)
)
14
(V
DD
Symbol
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
Min
–0.3
–0.3
0.36
0.70
Q/2) - 0.2
slr(i)
–10
1.7
2.0
t
–
–
–
–
–
–
L
Register and PLL Specifications
Min
1.0
2.0
30
0
–
(V
V
V
V
V
DD
DD
DD
DD
DD
©2003 Micron Technology, Inc. All rights reserved.
Max
Q/2) + 0.2
+10
200
300
Q + 0.3
Q + 0.3
Q + 0.6
Q + 0.6
0.7
3.5
12
–0.50
Max
100
4.0
50
–
Units
MHz
V/ns
kHz
Units
µs
%
mA
µA
µA
µA
pF
V
V
V
V
V
V