MT16HTS51264HY-667A1 Micron Technology Inc, MT16HTS51264HY-667A1 Datasheet
MT16HTS51264HY-667A1
Specifications of MT16HTS51264HY-667A1
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MT16HTS51264HY-667A1 Summary of contents
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... DDR2 SDRAM SODIMM MT16HTS25664HY – 2GB MT16HTS51264HY – 4GB Features • 200-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, or PC2-5300 • 2GB (256 Meg x 64) or 4GB (512 Meg x 64) • 1.8V DD DDQ • 1.7–3.6V DDSPD • ...
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... The data sheet for the base device can be found on Micron’s Web site. Notes: 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT16HTS51264HY-667A1. PDF: 09005aef821e5bf3 hts16c256_512x64h.pdf - Rev. E 3/10 EN ...
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Pin Assignments Table 5: Pin Assignments 200-Pin DDR2 SODIMM Front Pin Symbol Pin Symbol Pin DQS2 101 REF 103 DQ0 55 DQ18 105 7 DQ1 57 DQ19 107 9 V ...
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... Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 6: Pin Descriptions Symbol Type Ax Input BAx Input ...
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Table 6: Pin Descriptions (Continued) Symbol Type SDA I/O RDQSx, Output RDQS#x Err_Out# Output (open drain Supply DD DDQ V Supply DDSPD V Supply REF V Supply SS – NC – NF – NU – RFU PDF: 09005aef821e5bf3 ...
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Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# DQS0# DQS0 DM0 DM DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS1# DQS1 DM1 DM DQ8 DQ DQ9 DQ DQ10 DQ ...
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... DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data trans- fers at the I/O pins. DDR2 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals ...
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Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other condi- tions outside those indicated in the device data ...
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... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully de- signed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Mi- cron encourages designers to simulate the signal characteristics of the system's memo- ry bus to ensure adequate signal integrity of the entire memory system ...
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I Specifications DD Table 9: DDR2 I Specifications and Conditions – 2GB DD Values shown for MT47H256M8THJ DDR2 SDRAM only and are computed from values specified in the 2Gb TwinDie (256 Meg x 8) component data sheet Parameter Operating one ...
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Table 9: DDR2 I Specifications and Conditions – 2GB (Continued) DD Values shown for MT47H256M8THJ DDR2 SDRAM only and are computed from values specified in the 2Gb TwinDie (256 Meg x 8) component data sheet Parameter Operating bank interleave read ...
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Table 10: DDR2 I Specifications and Conditions – 4GB DD Values shown for MT47H512M8THM DDR2 SDRAM only and are computed from values specified in the 4Gb TwinDie (512 Meg x 8) component data sheet Parameter Operating one bank active-precharge current: ...
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Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 11: SPD EEPROM Operating Conditions Parameter/Condition Supply voltage Input high voltage: logic 1; All inputs Input low voltage: logic 0; All inputs Output low voltage: I ...
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Module Dimensions Figure 3: 200-Pin DDR2 SODIMM 2.0 (0.079) R (2X) U1 1.8 (0.071) (2X) 6.0 (0.236) TYP 2.55 (0.10) TYP 2.0 (0.079) TYP U6 Pin 200 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted. ...