MT8VDDT6464HG-335D1 Micron Technology Inc, MT8VDDT6464HG-335D1 Datasheet - Page 10
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MT8VDDT6464HG-335D1
Manufacturer Part Number
MT8VDDT6464HG-335D1
Description
MODULE DDR SDRAM 512MB 200SODIMM
Manufacturer
Micron Technology Inc
Specifications of MT8VDDT6464HG-335D1
Memory Type
DDR SDRAM
Memory Size
512MB
Speed
167MHz
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
64Mx64
Total Density
512MByte
Chip Density
512Mb
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.4A
Number Of Elements
8
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
557-1127
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Table 9:
PDF: 09005aef8092973f / Source: 09005aef80921669
DD8C32_64x64H.fm - Rev. D 9/08 EN
Parameter/Condition
Operating one bank active-precharge current:
t
cycle; Address and control inputs changing once every two clock
cycles
Operating one bank active-read-precharge current: BL = 4;
t
inputs changing once per clock cycle
Precharge power-down standby current: All device banks idle;
Power-down mode;
Idle standby current: CS# = HIGH; All device banks idle;
t
changing once per clock cycle; V
Active power-down standby current: One device bank active;
Power-down mode;
Active standby current: CS# = HIGH; CKE = HIGH; One device bank
active;
changing twice per clock cycle; Address and other control inputs
changing once per clock cycle
Operating burst read current: BL = 2; Continuous burst reads; One
device bank active; Address and control inputs changing once per
clock cycle;
Operating burst write current: BL = 2; Continuous burst writes;
One device bank active; Address and control inputs changing once
per clock cycle;
twice per clock cycle
Auto refresh current
Self refresh current: CKE ≤ 0.2V
Operating bank interleave read current: Four device bank
interleaving reads (BL = 4) with auto precharge;
t
READ or WRITE commands
DD
CK =
RC =
CK =
CK =
Specifications
t
t
t
t
RC (MIN);
CK (MIN); DQ, DM, and DQS inputs changing once per clock
CK (MIN); CKE = HIGH; Address and other control inputs
CK (MIN); Address and control inputs change only during active
t
RC =
t
CK =
t
RAS (MAX);
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Values are for the MT46V32M8 DDR SDRAM only and are computed from values specified in the
256Mb (32 Meg x 8) component data sheet
DD
t
CK =
t
CK =
t
CK (MIN); I
Specifications and Conditions – 256MB (Die Revision K)
t
t
CK =
CK =
t
CK (MIN); DQ, DM, and DQS inputs changing
t
CK (MIN); I
t
t
t
CK =
CK (MIN); CKE = LOW
CK (MIN); CKE = LOW
OUT
IN
t
CK (MIN); DQ, DM, and DQS inputs
= 0mA
= V
OUT
REF
= 0mA; Address and control
for DQ, DM, and DQS
256MB, 512MB (x64, SR) 200-Pin DDR SDRAM SODIMM
t
t
t
t
RC =
RC =
RFC =
RFC = 7.8125µs
t
t
RC (MIN);
RC (MIN);
t
RFC (MIN)
10
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
I
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I
I
I
DD
I
I
DD
DD
I
DD
I
I
DD
DD
DD
DD
DD
DD
DD
DD
4W
3N
5A
4R
2P
2F
3P
0
1
5
6
7
1,440
1,440
1,280
2,320
-40B
800
960
400
280
480
32
48
32
Electrical Specifications
©2004 Micron Technology, Inc. All rights reserved.
1,280
1,280
1,280
2,160
-335
720
920
400
240
440
32
48
32
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA