MT16LSDT3264AG-133G3 Micron Technology Inc, MT16LSDT3264AG-133G3 Datasheet - Page 11

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MT16LSDT3264AG-133G3

Manufacturer Part Number
MT16LSDT3264AG-133G3
Description
MODULE SDRAM 256MB 168-DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT16LSDT3264AG-133G3

Memory Type
SDRAM
Memory Size
256MB
Speed
133MHz
Package / Case
168-DIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
168UDIMM
Device Core Size
64b
Organization
32Mx64
Total Density
256MByte
Chip Density
128Mb
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
1.216A
Number Of Elements
16
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 65C
Operating Temperature Classification
Commercial
Pin Count
168
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
because unknown operation or incompatibility with
future versions may result.
Write Burst Mode
M2 applies to both read and write bursts; when M9 = 1,
the programmed burst length applies to read bursts,
but write accesses are single-location (nonburst)
accesses.
09005aef80bccbe7
SD8_16C16_32x64AG.fm - Rev. E 12/05 EN
Test modes and reserved states should not be used
When M9 = 0, the burst length programmed via M0-
11
128MB (x64, SR), 256MB (x64, DR)
Table 8:
SPEED
-13E
-133
-10E
Micron Technology, Inc., reserves the right to change products or specifications without notice.
168-PIN SDRAM UDIMM
CAS Latency Table
CAS LATENCY = 2
CLOCK FREQUENCY (MHZ)
≤ 133
≤ 100
≤ 100
ALLOWABLE OPERATING
©2003, 2004 Micron Technology, Inc. All rights reserved.
CAS LATENCY = 3
≤ 143
≤ 133
≤ 125

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