MT8VDDT6464HDG-335F2 Micron Technology Inc, MT8VDDT6464HDG-335F2 Datasheet - Page 12

MODULE DDR 512MB 200-SODIMM

MT8VDDT6464HDG-335F2

Manufacturer Part Number
MT8VDDT6464HDG-335F2
Description
MODULE DDR 512MB 200-SODIMM
Manufacturer
Micron Technology Inc

Specifications of MT8VDDT6464HDG-335F2

Memory Type
DDR SDRAM
Memory Size
512MB
Speed
333MT/s
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
64Mx64
Total Density
512MByte
Chip Density
512Mb
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
800mA
Number Of Elements
8
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 14; notes appear on pages 17–20; 0°C ≤ T
Table 11: AC Input Operating Conditions
Notes: 1–5, 14, 48; notes appear on pages 17–20; 0°C ≤ T
pdf: 09005aef80b575ca, source: 09005aef806e1d28
DDA8C32_64x64HDG.fm - Rev. D 9/04 EN
PARAMETER/CONDITION
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT
Any input 0V ≤ V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQ pins are disabled; 0V ≤ V
OUTPUT LEVELS
High Current (V
Low Current (V
OUTPUT LEVELS: Reduced drive option
High Current (V
Low Current (V
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on V
Voltage on V
Relative to V
Relative to V
Relative to V
OUT
OUT
OUT
REF
OUT
DD
DD
IN
≤ V
SS
SS
SS
Q Supply
Supply
= 0.373V, maximum V
= V
= 0.763V, maximum V
and Inputs
= V
. . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
DD
DD
DD
, Vref pin 0V ≤ V
Q -0.763V, minimum V
Q-0.373V, minimum V
OUT
≤ V
DD
IN
Q)
≤ 1.35V
REF
REF
, maximum V
,maximum V
REF
REF
SYMBOL
Command/
Address, RAS#,
CAS#, WE#
CK, CK#, CKE
DM
DQ, DQS
, minimum V
, minimum V
V
V
V
REF
IH
IL
A
(
(
≤ +70°C
AC
(
AC
AC
A
)
)
TT
)
TT
≤ +70°C; V
)
)
12
TT
TT
)
)
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
256MB, 512MB (x64, DR) PC3200
0.49 × V
V
SYMBOL
Voltage on I/O Pins
Operating Temperature,
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Short Circuit Output Current. . . . . . . . . . . . . . . 50mA
V
REF
V
DD
V
V
I
IH
V
I
IL
V
I
I
OHR
DD
I
OLR
Relative to V
OH
MIN
OZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T
REF
OL
DD
(
I
I
I
TT
(
= V
I
I
I
+ 0.310
DC
DC
A
Q
(ambient) . . . . . . . . . . . . . . . . . . . .. 0°C to +70°C
)
)
DD
DD
Q = +2.6V ±0.1V
Q
V
V
REF
REF
0.49 ×
V
-16.8
MIN
16.8
-0.3
-16
-10
2.5
2.5
DD
-8
-4
-9
0.51 × V
+ 0.15
9
200-PIN DDR SODIMM
- 0.04 V
V
SS
REF
Q
MAX
. . . . . . . . . . . . -0.5V to V
- 0.310
V
DD
V
REF
REF
DD
0.51 ×
V
MAX
Q
2.7
2.7
DD
16
10
+ 0.04
8
4
- 0.15
+ 0.3
Q
UNITS
V
V
V
UNITS
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V
V
©2004 Micron Technology, Inc.
12, 25, 36
12, 25, 36
NOTES
DD
32, 37, 40,
32, 37, 49
NOTES
6
33, 35
34, 35
Q +0.5V
6, 40
7, 40
49
25
25
47
47
47
47

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