MT18LSDT12872AG-133C1 Micron Technology Inc, MT18LSDT12872AG-133C1 Datasheet - Page 14
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MT18LSDT12872AG-133C1
Manufacturer Part Number
MT18LSDT12872AG-133C1
Description
MODULE SDRAM 1GB 168DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT18LSDT12872AG-133C1.pdf
(29 pages)
Specifications of MT18LSDT12872AG-133C1
Memory Type
SDRAM
Memory Size
1GB
Speed
133MHz
Package / Case
168-DIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
168UDIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
512Mb
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
1.157A
Number Of Elements
18
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 65C
Operating Temperature Classification
Commercial
Pin Count
168
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Absolute Maximum Ratings
Table 9:
DC Operating Specifications
Table 10:
Table 11:
PDF: 09005aef8088b1bf/Source: 09005aef808807ca
SD9_18C64_128X72AG.fm - Rev. C 6/05 EN
Parameter
Parameter/Condition
Parameter/Condition
Voltage on V
Voltage on inputs NC or I/O pins relative to V
Operating temperature T
Storage temperature (plastic)
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Input leakage current:
Any input 0V ≤ V
(All other pins not under test = 0V)
Output leakage current: DQ pins are disabled;
0V ≤ V
Output levels:
Output high voltage (I
Output low voltage (I
Supply Voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Input leakage current:
Any input 0V ≤ V
(All other pins not under test = 0V)
OUT
≤ V
DD
Absolute Maximum DC Ratings
DC Electrical Characteristics and Operating Conditions – 512MB
Notes: 1, 5, 6; notes appear on page 19; V
DD
DC Electrical Characteristics and Operating Conditions – 1GB
Notes: 1, 5, 6; notes appear on page 19; V
, V
Q
IN
IN
DD
≤ V
≤ V
Q supply relative to V
OUT
DD
OUT
DD
OPR
= 4mA)
= -4mA)
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
(commercial - ambient)
SS
512MB (SR), 1GB (DR): (x72, ECC) 168-Pin SDRAM UDIMM
SS
Command and
address inputs
CKE
CK0, CK1, S0#, S1#
CK2, CK3, S2#, S3#
DQMB
Command and
address inputs,
CKE
CK0, S0#
CK2, S2#
DQMB
DQ
DD
DD
= V
= V
14
DD
DD
Q = +3.3V ±0.3V
Q = +3.3V ±0.3V
V
V
Symbol
Symbol
DD
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
V
V
V
, V
V
I
, V
V
OZ
I
OH
I
OL
IH
IH
IL
IL
I
I
DD
DD
Q
Q
Min
Min
-0.3
-0.3
-45
-25
-20
2.4
-90
-45
-25
-20
-10
Absolute Maximum Ratings
-5
-5
3
2
–
3
2
V
V
Min
-55
DD
DD
-1
-1
0
Max
Max
3.6
0.8
0.4
3.6
0.8
©2002 Micron Technology, Inc. All rights reserved.
45
25
20
90
45
25
20
10
5
5
–
+ 0.3
+ 0.3
Max
+150
+4.6
+4.6
+65
Units
Units
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
Units
Notes
Notes
°C
°C
V
V
22
22
33
33
22
22
33