MT18LSDT12872AG-133C1 Micron Technology Inc, MT18LSDT12872AG-133C1 Datasheet - Page 14

• Manufacturer Part Number: MT18LSDT12872AG-133C1
• Description: MODULE SDRAM 1GB 168DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18LSDT12872AG-133C1

• Memory Type: SDRAM
• Memory Size: 1GB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168UDIMM
• Device Core Size: 72b
• Organization: 128Mx72
• Total Density: 1GByte
• Chip Density: 512Mb
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 1.157A
• Number Of Elements: 18
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Absolute Maximum Ratings
Table 9:
DC Operating Specifications
Table 10:
Table 11:
PDF: 09005aef8088b1bf/Source: 09005aef808807ca
SD9_18C64_128X72AG.fm - Rev. C 6/05 EN
Parameter
Parameter/Condition
Parameter/Condition
Voltage on V
Voltage on inputs NC or I/O pins relative to V
Operating temperature T
Storage temperature (plastic)
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Input leakage current:
Any input 0V ≤ V
(All other pins not under test = 0V)
Output leakage current: DQ pins are disabled;
0V ≤ V
Output levels:
Output high voltage (I
Output low voltage (I
Supply Voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Input leakage current:
Any input 0V ≤ V
(All other pins not under test = 0V)
OUT
≤ V
DD
Absolute Maximum DC Ratings
DC Electrical Characteristics and Operating Conditions – 512MB
Notes: 1, 5, 6; notes appear on page 19; V
DD
DC Electrical Characteristics and Operating Conditions – 1GB
Notes: 1, 5, 6; notes appear on page 19; V
, V
Q
IN
IN
DD
≤ V
≤ V
Q supply relative to V
OUT
DD
OUT
DD
OPR
= 4mA)
= -4mA)
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
(commercial - ambient)
SS
512MB (SR), 1GB (DR): (x72, ECC) 168-Pin SDRAM UDIMM
SS
Command and
address inputs
CKE
CK0, CK1, S0#, S1#
CK2, CK3, S2#, S3#
DQMB
Command and
address inputs,
CKE
CK0, S0#
CK2, S2#
DQMB
DQ
DD
DD
= V
= V
14
DD
DD
Q = +3.3V ±0.3V
Q = +3.3V ±0.3V
V
V
Symbol
Symbol
DD
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
V
V
V
, V
V
I
, V
V
OZ
I
OH
I
OL
IH
IH
IL
IL
I
I
DD
DD
Q
Q
Min
Min
-0.3
-0.3
-45
-25
-20
2.4
-90
-45
-25
-20
-10
Absolute Maximum Ratings
-5
-5
3
2
–
3
2
V
V
Min
-55
DD
DD
-1
-1
0
Max
Max
3.6
0.8
0.4
3.6
0.8
©2002 Micron Technology, Inc. All rights reserved.
45
25
20
90
45
25
20
10
5
5
–
+ 0.3
+ 0.3
Max
+150
+4.6
+4.6
+65
Units
Units
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
Units
Notes
Notes
°C
°C
V
V
22
22
33
33
22
22
33