MT36LSDF12872G-13ED1 Micron Technology Inc, MT36LSDF12872G-13ED1 Datasheet - Page 26
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MT36LSDF12872G-13ED1
Manufacturer Part Number
MT36LSDF12872G-13ED1
Description
MODULE SDRAM 1GB 168DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT36LSDF12872G-133D1.pdf
(30 pages)
Specifications of MT36LSDF12872G-13ED1
Memory Type
SDRAM
Memory Size
1GB
Speed
133MHz
Package / Case
168-DIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 20:
PDF: 09005aef80b1835d/Source: 09005aef80b18348
SD36C128_256x72G.fm - Rev. E 6/05 EN
Parameter/Condition
Stop condition setup time
WRITE cycle time
Serial Presence-Detect EEPROM AC Operating Conditions
All voltages referenced to V
Notes: 1. To avoid spurious START and STOP conditions, a minimum delay is placed between
2. This parameter is sampled.
3. For a reSTART condition, or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
SCL=1 and the falling or rising edge of SDA.
write sequence to the end of the EEPROM internal erase/program cycle. During the
WRITE cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to
pull-up resistor, and the EEPROM does not respond to its slave address.
SS
; V
DDSPD
= +2.3V to +3.6V
1GB, 2GB: (x72, ECC, DR) 168-Pin SDRAM RDIMM
26
Symbol
t
SU:STO
t
WRC
t
WRC) is the time from a valid stop condition of a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
0.6
Serial Presence Detect
Max
10
©2002 Micron Technology, Inc. All rights reserved.
Units
ms
µs
Notes
4