MT36VDDT51272G-265A2 Micron Technology Inc, MT36VDDT51272G-265A2 Datasheet - Page 9

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MT36VDDT51272G-265A2

Manufacturer Part Number
MT36VDDT51272G-265A2
Description
MODULE SDRAM DDR 4GB 184DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT36VDDT51272G-265A2

Memory Type
DDR SDRAM
Memory Size
4GB
Speed
266MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Electrical Specifications
Table 8:
PDF: 09005aef809d5451/Source: 09005aef807da325
dd36c128_256_512x72.fm - Rev. F 6/08 EN
V
V
Symbol
DD
IN
, V
I
/V
T
OZ
I
A
I
DD
OUT
Q
Absolute Maximum Ratings
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
disabled
DRAM ambient operating temperature
REF
DD
/V
Notes:
input 0V ≤ V
DD
Q supply voltage relative to V
Stresses greater than those listed in Table 8 may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions outside those indicated in each device’s data sheet is not implied.
Exposure to absolute maximum rating conditions for extended periods may adversely
affect reliability.
1. For further information, refer to technical note
on Micron’s Web site.
IN
≤ 1.35V (All other pins not under
OUT
SS
≤ V
SS
DD
1GB, 2GB, 4GB (x72, ECC, DR) 184-Pin DDR RDIMM
1
IN
Q; DQ are
≤ V
DD
9
;
Address inputs,
RAS#, CAS#, WE#, BA,
S#, CKE
CK, CK#
DM
DQ, DQS
Commercial
Industrial
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TN-00-08: “Thermal Applications,”
Electrical Specifications
Min
–1.0
–0.5
–10
–10
–40
©2003 Micron Technology, Inc. All rights reserved
–5
–4
0
Max
+3.6
+3.2
+10
+10
+70
+85
+5
+4
available
Units
µA
µA
°C
°C
V
V

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