MT4LSDT864AG-13EG2 Micron Technology Inc, MT4LSDT864AG-13EG2 Datasheet - Page 10
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MT4LSDT864AG-13EG2
Manufacturer Part Number
MT4LSDT864AG-13EG2
Description
MODULE SDRAM 64MB 168DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT4LSDT1664AY-133D1.pdf
(28 pages)
Specifications of MT4LSDT864AG-13EG2
Memory Type
SDRAM
Memory Size
64MB
Speed
133MHz
Package / Case
168-DIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Figure 4:
PDF: 09005aef8078bc7c/Source: 09005aef8078bcd3
SD4C4_8_16X64AG.fm - Rev. D 1/07 EN
Mode Register Definition Diagram
Notes:
1. M11 and M10 should be programmed = “0, 0” to ensure compatibility with future devices.
2. M12, M11, and M10 should be programmed = “0, 0, 0” to ensure compatibility with future
32MB and 64MB Modules
128MB Module
devices.
12
A12
Reserved
Reserved
11
11
A11
A11
2
10
10
A10
A10
1
WB
WB
M9
0
1
9
9
A9
A9
32MB, 64MB, 128MB (x64, SR) 168-Pin SDRAM UDIMM
Op Mode
Op Mode
8
8
A8
A8
7
7
A7
A7
M8
0
–
CAS Latency
CAS Latency
Single location access
6
6
Write Burst Mode
A6
A6
Programmed BL
5
5
M7
A5
A5
0
–
10
4
4
A4
A4
M3
BT
BT
M6–M0
Defined
0
1
3
3
A3
A3
–
M2
M6
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
Burst Length
Burst Length
2
2
A2
A2
M1
M5
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
M0
M4
1
1
0
1
0
1
0
1
0
1
Operating Mode
Standard operation
All other states reserved
0
1
0
1
0
1
0
1
A1
A1
0
0
A0
A0
Reserved
Reserved
Reserved
Full page
M3 = 0
Burst Type
Interleaved
Sequential
1
2
4
8
Mode Register (Mx)
Mode Register (Mx)
Address Bus
Address Bus
Burst Length
CAS Latency
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
2
3
Reserved
Reserved
Reserved
Reserved
M3 = 1
1
2
4
8
Mode Register Definition
©2002 Micron Technology, Inc. All rights reserved.