MT8HTF12864HDY-53EA3 Micron Technology Inc, MT8HTF12864HDY-53EA3 Datasheet - Page 6

• Manufacturer Part Number: MT8HTF12864HDY-53EA3
• Description: MODULE SDRAM DDR2 1GB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8HTF12864HDY-53EA3

• Memory Type: DDR2 SDRAM
• Memory Size: 1GB
• Speed: 533MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 7: Pin Descriptions (Continued)
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
V
Err_Out#
Symbol
RDQS#x
RDQSx,
DD
V
SDA
V
DDSPD
RFU
V
NU
NC
NF
/V
REF
SS
DDQ
(open drain)
Output
Output
Supply
Supply
Supply
Supply
Type
I/O
–
–
–
–
Description
Serial data: Used to transfer addresses and data into and out of the SPD EEPROM on
the I
Redundant data strobe (x8 devices only): RDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When RDQS is enabled, RDQS
is output with read data only and is ignored during write data. When RDQS is disa-
bled, RDQS becomes data mask (see DMx). RDQS# is only used when RDQS is enabled
and differential data strobe mode is enabled.
Parity error output: Parity error found on the command and address bus.
Power supply: 1.8V ±0.1V. The component V
ule V
SPD EEPROM power supply: 1.7–3.6V.
Reference voltage: V
Ground.
No connect: These pins are not connected on the module.
No function: These pins are connected within the module, but provide no functionality.
Not used: These pins are not used in specific module configurations/operations.
Reserved for future use.
2
DD
C bus.
.
256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
DD
6
/2.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DD
and V
DDQ
are connected to the mod-
© 2006 Micron Technology, Inc. All rights reserved.
Pin Descriptions