MT8HTF3264HDY-667B3 Micron Technology Inc, MT8HTF3264HDY-667B3 Datasheet - Page 6
![MODULE DDR2 256MB 200SODIMM](/photos/7/83/78349/mfg_mt_sodimm_series_sml.jpg)
MT8HTF3264HDY-667B3
Manufacturer Part Number
MT8HTF3264HDY-667B3
Description
MODULE DDR2 256MB 200SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT8HTF6464HDY-53EB3.pdf
(19 pages)
Specifications of MT8HTF3264HDY-667B3
Memory Type
DDR2 SDRAM
Memory Size
256MB
Speed
667MT/s
Package / Case
200-SODIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 7: Pin Descriptions (Continued)
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
V
Err_Out#
Symbol
RDQS#x
RDQSx,
DD
V
SDA
V
DDSPD
RFU
V
NU
NC
NF
/V
REF
SS
DDQ
(open drain)
Output
Output
Supply
Supply
Supply
Supply
Type
I/O
–
–
–
–
Description
Serial data: Used to transfer addresses and data into and out of the SPD EEPROM on
the I
Redundant data strobe (x8 devices only): RDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When RDQS is enabled, RDQS
is output with read data only and is ignored during write data. When RDQS is disa-
bled, RDQS becomes data mask (see DMx). RDQS# is only used when RDQS is enabled
and differential data strobe mode is enabled.
Parity error output: Parity error found on the command and address bus.
Power supply: 1.8V ±0.1V. The component V
ule V
SPD EEPROM power supply: 1.7–3.6V.
Reference voltage: V
Ground.
No connect: These pins are not connected on the module.
No function: These pins are connected within the module, but provide no functionality.
Not used: These pins are not used in specific module configurations/operations.
Reserved for future use.
2
DD
C bus.
.
256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
DD
6
/2.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DD
and V
DDQ
are connected to the mod-
© 2006 Micron Technology, Inc. All rights reserved.
Pin Descriptions