MT9HTF3272Y-53EB2 Micron Technology Inc, MT9HTF3272Y-53EB2 Datasheet - Page 2

• Manufacturer Part Number: MT9HTF3272Y-53EB2
• Description: MODULE DDR2 256MB 240DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9HTF3272Y-53EB2

• Memory Type: DDR2 SDRAM
• Memory Size: 256MB
• Speed: 533MT/s
• Package / Case: 240-DIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240RDIMM
• Device Core Size: 72b
• Organization: 32Mx72
• Total Density: 256MByte
• Chip Density: 256Mb
• Access Time (max): 500ps
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.44A
• Number Of Elements: 9
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 55C
• Operating Temperature Classification: Commercial
• Pin Count: 244
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 2: Addressing
Table 3: Part Numbers and Timing Parameters – 256MB
Base device: MT47H32M8,
Table 4: Part Numbers and Timing Parameters – 512MB
Base device: MT47H64M8,
Table 5: Part Numbers and Timing Parameters – 1GB
Base device: MT47H128M8,
PDF: 09005aef82250868
htf9c32_64_128x72.pdf - Rev. F 3/10 EN
Parameter
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
Part Number
MT9HTF3272(I)Y-667__
MT9HTF3272(I)Y-53E__
MT9HTF3272(I)Y-40E__
Part Number
MT9HTF6472P(I)Y-80E__
MT9HTF6472P(I)Y-800__
MT9HTF6472P(I)Y-667__
MT9HTF6472P(I)Y-53E__
MT9HTF6472P(I)Y-40E__
Part Number
MT9HTF12872P(I)Y-80E__
MT9HTF12872P(I)Y-800__
MT9HTF12872P(I)Y-667__
MT9HTF12872P(I)Y-53E__
MT9HTF12872P(I)Y-40E__
Notes:
1. Data sheets for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con-
sult factory for current revision codes. Example: MT9HTF6472Y-667D2.
2
2
2
1
1
1
256Mb DDR2 SDRAM
512Mb DDR2 SDRAM
1Gb DDR2 SDRAM
256MB, 512MB, 1GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
256Mb (32 Meg x 8)
Module
Density
Module
Density
Module
Density
256MB
256MB
256MB
512MB
512MB
512MB
512MB
512MB
1GB
1GB
1GB
1GB
1GB
8K A[12:0]
1K A[9:0]
4 BA[1:0]
256MB
S0#
8K
Configuration
Configuration
Configuration
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
2
512Mb (64 Meg x 8)
Bandwidth
Bandwidth
Bandwidth
Module
Module
Module
5.3 GB/s
4.3 GB/s
3.2 GB/s
6.2 GB/s
6.2 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
6.2 GB/s
6.2 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
16K A[13:0]
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1K A[9:0]
4 BA[1:0]
512MB
S0#
8K
Memory Clock/
Memory Clock/
Memory Clock/
3.75ns/533 MT/s
3.75ns/533 MT/s
3.75ns/533 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
Data Rate
Data Rate
Data Rate
© 2003 Micron Technology, Inc. All rights reserved.
1Gb (128 Meg x 8)
16K A[13:0]
8 BA[2:0]
1K A[9:0]
1GB
S0#
8K
(CL-
(CL-
(CL-
Clock Cycles
Clock Cycles
Clock Cycles
Features
t
t
t
5-5-5
4-4-4
3-3-3
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
RCD-
RCD-
RCD-
t
t
t
RP)
RP)
RP)