MT9HTF6472Y-40EB2 Micron Technology Inc, MT9HTF6472Y-40EB2 Datasheet - Page 16

MODULE SDRAM DDR2 512MB 240DIMM

MT9HTF6472Y-40EB2

Manufacturer Part Number
MT9HTF6472Y-40EB2
Description
MODULE SDRAM DDR2 512MB 240DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT9HTF6472Y-40EB2

Memory Type
DDR2 SDRAM
Memory Size
512MB
Speed
400MT/s
Package / Case
240-DIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240RDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
512Mb
Access Time (max)
600ps
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.035A
Number Of Elements
9
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 55C
Operating Temperature Classification
Commercial
Pin Count
244
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 18:
PDF: 09005aef817ab1fc/Source: 09005aef817ab1dd
HTF9C32_64_128x72K.fm - Rev. C 9/06 EN
Byte
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
SDRAM access from CK,
MAX CL - 1
SDRAM cycle time,
MAX CL - 2
SDRAM access from CK,
MAX CL - 2
Minimum row precharge time,
t
Minimum row active-to-row
active,
Minimum RAS#-to-CAS# delay,
t
Minimum RAS# pulse width,
Module rank density
Address and command setup
time,
Address and command hold time,
t
Data/ Data mask input setup time,
t
Data/ Data mask input hold time,
t
Write recovery time,
WRITE-to-READ command delay,
t
READ-to-PRECHARGE command
delay,
Memory analysis probe
Extension for bytes 41 and 42
RP
RCD
IH
DS
DH
WTR
b
b
b
Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; table notes located on page 17
t
IS
t
t
RTP
RRD
b
Description
t
CK,
t
256MB, 512MB, 1GB: (x72, SR) 244-Pin DDR2 Registered MiniDIMM
WR
t
t
AC,
AC,
t
RAS
256MB, 512MB
-800/-667/-53E/
-800/-667/-53E/
-53E/-40E(N/A)
-53E/-40E(N/A)
-667/-53E/-40E
(Version)
-80E/-800/
-80E/-800
-80E/-800
-80E/-800
-667/-53E
-80E/-800
-80E/-800
-80E/-800
-667/-53E
-80E/-800
-800/-40E
-667/-53E
Entry
-667
-53E
-40E
-667
-667
-80E
-40E
-80E
-40E
-40E
1GB
-667
-53E
-40E
-667
-53E
-40E
-40E
-667
-53E
-40E
-80E
-80E
-800
16
MT9HTF3272(P)K
MT9HTF3272K/
–/3C
–/3C
2D
2D
3C
45
50
60
50
00
45
00
1E
28
40
20
25
35
27
37
47
10
15
17
22
27
28
1E
1E
00
00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Register and PLL Specifications
MT9HTF6472(P)K
MT9HTF6472K/
2D
2D
40
45
50
60
00
50
00
00
45
00
32
3C
1E
32
3C
28
80
17
20
25
35
25
27
37
47
10
15
12
17
22
27
3C
1E
28
1E
1E
00
30
00
00
5
©2005 Micron Technology, Inc. All rights reserved.
MT9HTF12872K(P)K
MT9HTF12872K/
2D
2D
40
45
50
60
00
50
00
00
45
00
32
3C
1E
32
3C
28
01
17
20
25
35
25
27
37
47
10
15
12
35
22
27
3C
28
28
1E
1E
00
06
06
06
5

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