MT9VDDT6472AY-335D1 Micron Technology Inc, MT9VDDT6472AY-335D1 Datasheet

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MT9VDDT6472AY-335D1

Manufacturer Part Number
MT9VDDT6472AY-335D1
Description
MODULE SDRAM DDR 512MB 184DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT9VDDT6472AY-335D1

Memory Type
DDR SDRAM
Memory Size
512MB
Speed
333MT/s
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184UDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
512Mb
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.575A
Number Of Elements
9
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DDR SDRAM UDIMM
MT9VDDT1672A – 128MB
MT9VDDT3272A – 256MB
MT9VDDT6472A – 512MB
For component data sheets, refer to Micron’s Web site:
Features
• 184-pin, unbuffered dual in-line memory module
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 128MB (16 Meg x 72), 256MB (32 Meg x 72), and
• Supports ECC error detection and correction
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Single rank
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 128MB,
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Gold edge contacts
Table 1:
PDF: 09005aef808f912d/Source: 09005aef808f8ccd
DD9C16_32_64x72A.fm - Rev. E 11/07 EN
(UDIMM)
512MB (64 Meg x 72)
architecture; 2n-prefetch architecture
received with data—that is, source-synchronous
data capture
operation
15.625µs; 256MB and 512MB, 7.8125µs maximum
average periodic refresh interval
compatibility
DD
DDSPD
Speed
Grade
-26A
-40B
-335
-262
-265
= V
DD
= +2.3V to +3.6V
Q = +2.5V (-40B: V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
Notes:
Industry
PC2700
PC2100
PC2100
PC2100
PC3200
1. The values of
128MB, 256MB, 512MB (x72, ECC, SR): 184-Pin DDR SDRAM UDIMM
actual DDR SDRAM device specifications are 15ns.
DD
= V
DD
1
Q)
CL = 3
400
t
RCD and
Data Rate (MT/s)
CL = 2.5
t
www.micron.com
RP for -335 modules show 18ns to align with industry specifications;
333
333
266
266
266
1
Figure 1:
Notes: 1. End of life.
PCB height: 31.75mm (1.25in)
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 184-pin DIMM (standard)
– 184-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
CL = 2
266
266
266
266
200
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact Micron for industrial temperature
3. Not recommended for new designs.
module offerings.
184-Pin UDIMM (MO-206)
t
(ns)
RCD
15
18
15
20
20
A
A
2
(ns)
≤ +85°C)
t
≤ +70°C)
15
18
15
20
20
RP
©2003 Micron Technology, Inc. All rights reserved.
(ns)
t
3
3
55
60
60
65
65
RC
3
Marking
Features
None
-40B
-262
-26A
-265
-335
G
Y
I
Notes
1

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MT9VDDT6472AY-335D1 Summary of contents

Page 1

... RCD and RP for -335 modules show 18ns to align with industry specifications; Micron Technology, Inc., reserves the right to change products or specifications without notice. 1 184-Pin UDIMM (MO-206) 2 ≤ +70°C) A ≤ +85° Contact Micron for industrial temperature module offerings ...

Page 2

ECC, SR): 184-Pin DDR SDRAM UDIMM Table 2: Addressing Parameter Refresh count Row address Device bank address Device configuration Column address Module rank address Table 3: Part Numbers and Timing Parameters – 128MB Base device: MT46V16M8, ...

Page 3

... MT9VDDT6472AG-335__ MT9VDDT6472AY-335__ MT9VDDT6472AG-262__ MT9VDDT6472AG-265__ MT9VDDT6472AY-265__ Notes: 1. Data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT9VDDT3272AY-335G4. ...

Page 4

ECC, SR): 184-Pin DDR SDRAM UDIMM Pin Assignments and Descriptions Table 6: Pin Assignments 184-Pin DDR UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ17 47 REF 2 DQ0 25 DQS2 ...

Page 5

ECC, SR): 184-Pin DDR SDRAM UDIMM Table 7: Pin Descriptions Symbol A0–A12 BA0, BA1 CK0, CK0#, CK1, CK1#, CK2, CK2# CKE0 DM0–DM7 RAS#, CAS#, WE# S0# SA0–SA2 SCL CB0–CB7 DQ0–DQ63 DQS0–DQS8 SDA ...

Page 6

ECC, SR): 184-Pin DDR SDRAM UDIMM Functional Block Diagram Figure 2: Functional Block Diagram BA0, BA1 A0–A11/A12 PDF: 09005aef808f912d/Source: 09005aef808f8ccd DD9C16_32_64x72A.fm - Rev. E 11/07 EN S0# DQS0 DM9 DM CS# DQS DQ0 DQ DQ1 DQ ...

Page 7

... The double data rate architecture is essentially a 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for DDR SDRAM modules effectively consists of a single 2n-bit- wide, one-clock-cycle data transfer at the internal DRAM core and two corresponding n- bit-wide, one-half-clock-cycle data transfers at the I/O pins ...

Page 8

... Simulations are significantly more accurate and realistic than a gross estimation of module capacitance when inductance and delay parameters associated with trace lengths are used in simulations. JEDEC modules are currently designed using simulations to close timing budgets. Component AC Timing and Operating Conditions Recommended AC operating conditions are given in the DDR component data sheets. Component specifications are available on Micron’ ...

Page 9

ECC, SR): 184-Pin DDR SDRAM UDIMM I Specifications DD Table 10: I Specifications and Conditions – 128MB DD Values are shown for the MT46V16M8 DDR SDRAM only and are computed from values specified in the 128Mb ...

Page 10

ECC, SR): 184-Pin DDR SDRAM UDIMM Table 11: I Specifications and Conditions – 256MB DD Values are shown for the MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x ...

Page 11

ECC, SR): 184-Pin DDR SDRAM UDIMM Table 12: I Specifications and Conditions – 512MB DD Values are shown for the MT46V64M8 DDR SDRAM only and are computed from values specified in the 512Mb (64 Meg x ...

Page 12

ECC, SR): 184-Pin DDR SDRAM UDIMM Serial Presence-Detect Table 13: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage: ...

Page 13

ECC, SR): 184-Pin DDR SDRAM UDIMM Module Dimensions Figure 3: 184-pin DDR UDIMM 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.3 (0.091) TYP Pin 1 2.21 (0.087) TYP 1.27 (0.05) 1.0 (0.039) TYP ...

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