MT8VDDT6464AG-335F4 Micron Technology Inc, MT8VDDT6464AG-335F4 Datasheet - Page 25

• Manufacturer Part Number: MT8VDDT6464AG-335F4
• Description: MODULE DDR SDRAM 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8VDDT6464AG-335F4

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 512Mb
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.4A
• Number Of Elements: 8
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 17: EEPROM Device Select Code
Most significant bit (b7) is sent first
Table 18: EEPROM Operating Modes
pdf: 09005aef80867ab3, source: 09005aef80867a99
DD8C16_32_64x64AG.fm - Rev. G 9/04 EN
SDA OUT
SELECT CODE
Memory Area Select Code (two arrays)
Protection Register Select Code
Current Address Read
Random Address Read
Sequential Read
Byte Write
Page Write
SDA IN
SCL
MODE
t SU:STA
RW BIT
Figure 15: SPD EEPROM Timing Diagram
1
0
1
1
0
0
t F
t HD:STA
t LOW
t AA
V
V
V
V
IH
IH
IH
IH
WC
V
V
or V
or V
or V
or V
IL
IL
IL
IL
IL
IL
t HIGH
t HD:DAT
b7
BYTES
DEVICE TYPE IDENTIFIER
1
0
≤ 16
25
≥ 1
1
1
1
1
128MB, 256MB, 512MB (x64, SR)
t DH
b6
0
1
INITIAL SEQUENCE
START, Device Select, RW = “1”
START, Device Select, RW = “0”, Address
reSTART, Device Select, RW = “1”
Similar to Current or Random Address Read
START, Device Select, RW = “0”
START, Device Select, RW = “0”
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM UDIMM
t SU:DAT
b5
1
1
b4
0
0
SA2
SA2
b3
CHIP ENABLE
SA1
SA1
b2
t SU:STO
t BUF
©2004 Micron Technology. Inc.
SA0
SA0
b1
UNDEFINED
RW
RW
RW
b0