MT18VDVF12872Y-335F1 Micron Technology Inc, MT18VDVF12872Y-335F1 Datasheet - Page 10
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MT18VDVF12872Y-335F1
Manufacturer Part Number
MT18VDVF12872Y-335F1
Description
MODULE DDR 1GB 184-DIMM VLP
Manufacturer
Micron Technology Inc
Datasheet
1.MT18VDVF12872G-40BD4.pdf
(12 pages)
Specifications of MT18VDVF12872Y-335F1
Memory Type
DDR SDRAM
Memory Size
1GB
Speed
333MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 10:
Table 11:
PDF: 09005aef81c7380b/Source: 09005aef81c7380e
DVF18C_128x72.fm - Rev. C 11/07 EN
Parameter
Parameter
DC high-level input voltage
DC low-level input voltage
Input voltage (limits)
Input differential-pair cross voltage
Input differential voltage
Input differential voltage
Input current
Dynamic supply current
Dynamic supply current
Dynamic supply current
Input capacitance
Stabilization time
Input clock slew rate
SSC modulation frequency
SSC clock input frequency deviation
PLL loop bandwidth (–3dB from unity gain)
PLL Specifications
CVF857 device or equivalent JESD82-1A
PLL Clock Driver Timing Requirements and Switching Characteristics
Notes:
1. PLL timing and switching specifications are critical for proper operation of the DDR DIMM.
This is a subset of parameters for the specific PLL used. Detailed PLL information is available
in JEDEC standard JESD82-1A.
Symbol
Symbol
V
V
I
I
I
ID
ID
DDPD
t
DDQ
ADD
V
V
V
C
V
slr(i)
I
t
(
(
IN
IH
IN
IX
–
–
–
IL
I
L
DC
AC
)
)
10
1GB (x72, ECC, SR): 184-Pin DDR VLP RDIMM
(V
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
–0.3
–0.3
0.36
0.70
Q/2) - 0.2
–10
1.7
2.0
Min
–
–
–
2.0
1.0
30
0
–
Register and PLL Specifications
(V
V
V
V
V
DD
DD
DD
DD
DD
Max
–0.50
Q/2) + 0.2
Max
+10
200
300
Q + 0.3
Q + 0.3
Q + 0.6
Q + 0.6
0.7
3.5
100
12
4.0
50
©2005 Micron Technology, Inc. All rights reserved
–
Units
Units
MHz
V/ns
kHz
mA
µA
µA
µA
µs
%
pF
V
V
V
V
V
V