MT9HVF6472PKY-40EB1 Micron Technology Inc, MT9HVF6472PKY-40EB1 Datasheet - Page 15
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MT9HVF6472PKY-40EB1
Manufacturer Part Number
MT9HVF6472PKY-40EB1
Description
MODULE DDR2 512MB 244-DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT9HVF12872KY-53EA1.pdf
(17 pages)
Specifications of MT9HVF6472PKY-40EB1
Memory Type
DDR2 SDRAM
Memory Size
512MB
Speed
400MT/s
Package / Case
244-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 16:
PDF: 09005aef81c9620b/Source: 09005aef81c961ec
HVF9C64_128x72K.fm - Rev. C 3/07 EN
47–61
Byte
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
62
Description
MIN row precharge time,
MIN row active-to-row active,
MIN RAS#-to-CAS# delay,
MIN active-to-precharge time,
Module rank density
Address and command setup time,
Address and command hold time,
Data/data mask input setup time,
Data/data mask input hold time,
Write recovery time,
WRITE-to-READ command delay,
READ-to-PRECHARGE command delay,
t
Memory analysis probe
Extension for bytes 41 and 42
MIN active-to-active/refresh time,
MIN AUTO REFRESH-to-ACTIVE/AUTO
REFRESH command period,
SDRAM device MAX cycle time,
t
SDRAM device MAX DQS–DQ skew time,
t
SDRAM device MAX read data hold skew
factor,
PLL relock time
Optional features, not supported
SPD revision
RTP
CK (MAX)
DQSQ
Serial Presence-Detect Matrix (continued)
t
QHS
t
WR
t
t
RCD
RP
t
RFC
512MB, 1GB: (x72, ECC, SR) 244-Pin DDR2 VLP Mini-RDIMM
t
t
RRD
RAS
t
t
DH
WTR
t
t
t
DS
RC
IH
t
IS
b
b
b
1
b
-800/-667/-53E/-40E
-800/-667/-53E/-40E
-80E/-800/-667/-53E
-800/-667/-53E/-40E
Entry (Version)
-800/-667/-53E
512MB, 1GB
Release 1.2
-80E/-800
-80E/-800
-80E/-800
-667/-53E
-80E/-800
-800/-40E
-667/-53E
-80E/-800
-80E/-800
15
-80E
-80E
-40E
-667
-53E
-40E
-667
-53E
-40E
-40E
-667
-53E
-40E
-80E
-80E
-80E
-40E
-667
-53E
-40E
-667
-53E
-40E
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Register and PLL Specifications
512MB
2D
2D
3C
3C
3C
3C
32
1E
32
28
80
17
20
25
35
25
27
37
47
05
10
15
12
17
22
27
1E
28
1E
1E
00
30
00
39
37
69
80
14
18
1E
23
1E
22
28
0F
00
12
©2005 Micron Technology, Inc. All rights reserved.
1GB
2D
2D
32
3C
1E
32
3C
28
01
17
20
25
35
25
27
37
47
05
10
15
12
17
22
27
3C
1E
28
1E
1E
00
36
06
39
3C
37
80
14
18
1E
23
1E
22
28
00
12
7F
0F