MT9HTF6472FY-667B4D3 Micron Technology Inc, MT9HTF6472FY-667B4D3 Datasheet - Page 12

• Manufacturer Part Number: MT9HTF6472FY-667B4D3
• Description: MODULE DDR2 512MB 240FBDIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9HTF6472FY-667B4D3

• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 667MT/s
• Package / Case: 240-FBDIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 19:
PDF: 09005aef81a2f1eb/Source: 09005aef81a2f20c
HTF9C64_128x72F.fm - Rev. B 9/07 EN
Byte
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
0
1
2
3
4
5
6
7
8
9
Description
SPD revision
Key byte/DRAM device type
Voltage levels of this assembly
SDRAM addressing: Device rows/columns/banks
Module physical attributes: Height/thickness
Module type
Module organization: Module ranks/SDRAM device width (I/O)
Fine time-base dividend and divisor
Medium time-base dividend
Medium time-base divisor
SDRAM MIN cycle time (
SDRAM MAX cycle time (
SDRAM CAS latencies supported
SDRAM MIN CL time (
SDRAM WRITE recovery times supported
SDRAM WRITE recovery time (
SDRAM WRITE latencies supported
SDRAM additive latencies supported
SDRAM MIN RAS-to-CAS delay (
SDRAM MIN row active-to-row active delay (
SDRAM MIN row precharge time (
SDRAM upper nibbles for
SDRAM MIN active to precharge time (
SDRAM MIN auto refresh-to-active/auto refresh time (
SDRAM MIN AUTO REFRESH-to-ACTIVE/AUTO REFRESH
command period (
SDRAM MIN AUTO REFRESH-to-ACTIVE/AUTO REFRESH
command period (
SDRAM internal WRITE-to-READ command delay (
SDRAM internal READ-to-PRECHARGE command delay (
SDRAM burst lengths supported
SDRAM drivers/terminations supported: 03 = 75Ω and 100Ω;
07 = 50Ω, 75Ω, and 100Ω
Drivers supported
SDRAM refresh rate (
CRC range/SPD bytes total/bytes used
Serial Presence-Detect Matrix – DRAM Device and Module
t
t
RFC-LSB)
RFC-MSB)
t
t
REFI) and 95°C self refresh
CAS)
t
CK [MIN])
t
CK [MAX])
t
RAS and
t
WR)
t
RCD)
t
RP)
t
RC
512MB, 1GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM
t
RAS)
t
RRD)
12
t
WTR)
t
RC)
t
RTP)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
4 banks or 8 banks
15ns (-667/-53E)
15ns (-667/-53E)
15ns (-667/-53E)
DDR2 FBDIMM
105ns (512MB)
Single rank/x8
127.5ns (1GB)
Weak drivers
3.75ns (-53E)
12.5ns (-80E)
12.5ns (-80E)
12.5ns (-80E)
Bytes 0–116/
5, 4, 3 (-667)
DRAM/AMB
10 columns/
1/4 = 0.25ns
1/4 = 0.25ns
Range, MIN
Range, MIN
Range, MIN
2.5ns (-80E)
3.0ns (-667)
256 bytes/
30.35mm/
5, 4 (-80E)
4, 3 (-53E)
176 bytes
-80E/-667
FBDIMM
7.16mm
14 rows/
Entry
5.0ps
7.5ns
7.5ns
7.8µs
15ns
40ns
55ns
-53E
4, 8
8ns
1.1
–
–
Serial Presence-Detect
©2005 Micron Technology, Inc. All rights reserved.
512MB
0A
DC
A4
0C
3C
3C
3C
3C
B4
C2
92
11
09
12
44
23
07
09
51
01
04
0F
20
24
33
23
32
22
42
40
32
1E
32
00
01
1E
1E
03
07
03
01
1GB
DC
0A
0C
3C
3C
3C
3C
B4
C2
92
11
09
12
45
23
07
09
51
01
04
0F
20
24
33
23
32
22
42
40
32
1E
32
00
FE
01
1E
1E
03
07
03
01