MT18HTF25672AY-667A3 Micron Technology Inc, MT18HTF25672AY-667A3 Datasheet

MODULE DDR2 2GB 240-DIMM

MT18HTF25672AY-667A3

Manufacturer Part Number
MT18HTF25672AY-667A3
Description
MODULE DDR2 2GB 240-DIMM
Manufacturer
Micron Technology Inc

Specifications of MT18HTF25672AY-667A3

Memory Type
DDR2 SDRAM
Memory Size
2GB
Speed
667MT/s
Package / Case
240-DIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240UDIMM
Device Core Size
72b
Organization
256Mx72
Total Density
2GByte
Chip Density
1Gb
Access Time (max)
45ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.503A
Number Of Elements
18
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 85C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DDR2 SDRAM Unbuffered DIMM (UDIMM)
MT18HTF6472A – 512MB
MT18HTF12872A – 1GB
MT18HTF25672A – 2GB
MT18HTF51272A – 4GB
For component data sheets, refer to Micron’s Web site:
Features
• 240-pin, unbuffered dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200,
• 512MB (64 Meg x 72), 1GB (128 Meg x 72),
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Supports ECC error detection and correction
• Dual rank
• Multiple internal device banks for concurrent
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
Table 1:
PDF: 09005aef80e8ad4d/Source: 09005aef80e785e6
HTF18C64_128_256_512x72A.fm - Rev. H 5/08 EN
PC2-5300, or PC2-6400
2GB (256 Meg x 72), 4GB (512 Meg x 72)
operation
Speed
Grade
DD
DDSPD
-80E
-800
-667
-53E
-40E
= V
DD
= +1.7V to +3.6V
Q = +1.8V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
Industry
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
512MB, 1GB, 2GB, 4GB (x72, DR, ECC) 240-Pin DDR2 SDRAM UDIMM
t
CK
CL = 6
800
1
CL = 5
Data Rate (MT/s)
667
667
800
www.micron.com
1
Figure 1:
Notes: 1. Contact Micron for availability of the 4GB
Height 30.0mm (1.18in)
Options
• Operating temperature
• Package
• Frequency/CAS latency
• PCB height
CL = 4
533
533
533
400
533
– Commercial (0°C ≤ T
– 240-pin DIMM (Pb-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
– 5.0ns @ CL = 3 (DDR2-400)
– 30mm (1.18 in)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact Micron for industrial temperature
3. Not available in 512MB module density.
device.
module offerings.
CL = 3
400
400
400
240-Pin UDIMM
(MO-237 R/C G or R/C B)
t
(ns)
12.5
RCD
C
15
15
15
15
2
≤ +85°C)
©2003 Micron Technology, Inc. All rights reserved.
3
3
(ns)
12.5
t
15
15
15
15
RP
Marking
Features
None
-80E
-53E
-40E
-800
-667
Y
(ns)
t
55
55
55
55
55
RC

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MT18HTF25672AY-667A3 Summary of contents

Page 1

DR, ECC) 240-Pin DDR2 SDRAM UDIMM DDR2 SDRAM Unbuffered DIMM (UDIMM) MT18HTF6472A – 512MB MT18HTF12872A – 1GB MT18HTF25672A – 2GB MT18HTF51272A – 4GB For component data sheets, refer to Micron’s Web site: Features • 240-pin, ...

Page 2

... MT18HTF12872AY-53E__ MT18HTF12872AY-40E__ Table 5: Part Numbers and Timing Parameters – 2GB Modules Base device: MT47H128M8 Module 1 Part Number Density MT18HTF25672AY-80E__ MT18HTF25672AY-800__ MT18HTF25672AY-667__ MT18HTF25672AY-53E__ MT18HTF25672AY-40E__ PDF: 09005aef80e8ad4d/Source: 09005aef80e785e6 HTF18C64_128_256_512x72A.fm - Rev. H 5/08 EN 512MB 1GB (A0–A12) 16K (A0–A13) 4 (BA0, BA1) 4 (BA0, BA1) 1KB 1KB 256Mb (32 Meg x 8) 512Mb (64 Meg (A0– ...

Page 3

... DR, ECC) 240-Pin DDR2 SDRAM UDIMM Table 6: Part Numbers and Timing Parameters – 4GB Modules Base device: MT47H256M8 Module 1 Part Number Density MT18HTF51272AY-80E__ MT18HTF51272AY-800__ MT18HTF51272AY-667__ MT18HTF51272AY-53E__ MT18HTF51272AY-40E__ Notes: 1. All part numbers end with a two-place code (not shown) that designating component and PCB revisions ...

Page 4

DR, ECC) 240-Pin DDR2 SDRAM UDIMM Pin Assignments and Descriptions Table 7: Pin Assignments 240-Pin UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ19 61 REF ...

Page 5

DR, ECC) 240-Pin DDR2 SDRAM UDIMM Table 8: Pin Descriptions Symbol Type ODT0, ODT1 Input On-die termination: ODT (registered HIGH) enables termination resistance internal to (SSTL_18) the DDR2 SDRAM. When enabled, ODT is only applied ...

Page 6

DR, ECC) 240-Pin DDR2 SDRAM UDIMM Functional Block Diagram Figure 2: Functional Block Diagram S1# S0 DQS0 DQS0 DM0 DM DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 ...

Page 7

... READs and by the memory controller during WRITEs. DQS is edge- aligned with data for READs and center-aligned with data for WRITEs. DDR2 SDRAM modules operate from a differential clock (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. ...

Page 8

... Simulations are significantly more accurate and realistic than a gross estimation of module capacitance when inductance and delay parameters associated with trace lengths are used in simulations. JEDEC modules are currently designed using simulations to close timing budgets. Component AC Timing and Operating Conditions Recommended AC operating conditions are given in the DDR2 component data sheets. Component specifications are available on Micron’ ...

Page 9

DR, ECC) 240-Pin DDR2 SDRAM UDIMM I Specifications DD Table 11: DDR2 I Specifications and Conditions – 512MB DD Values shown for MT47H32M8 DDR2 SDRAM only and are computed from values specified in the 256Mb ...

Page 10

DR, ECC) 240-Pin DDR2 SDRAM UDIMM Table 12: DDR2 I Specifications and Conditions – 1GB DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x ...

Page 11

DR, ECC) 240-Pin DDR2 SDRAM UDIMM Table 13: DDR2 I Specifications and Conditions (Die Revision A) – 2GB DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb ...

Page 12

DR, ECC) 240-Pin DDR2 SDRAM UDIMM Table 14: DDR2 I Specifications and Conditions (Die Revision E) – 2GB DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb ...

Page 13

DR, ECC) 240-Pin DDR2 SDRAM UDIMM Table 15: DDR2 I Specifications and Conditions – 4GB DD Values shown for MT47H256M8 DDR2 SDRAM only and are computed from values specified in the 2Gb (256 Meg x ...

Page 14

DR, ECC) 240-Pin DDR2 SDRAM UDIMM Serial Presence-Detect Table 16: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic ...

Page 15

DR, ECC) 240-Pin DDR2 SDRAM UDIMM Table 18: Serial Presence-Detect Matrix Byte Description 0 Number of SPD bytes used by Micron 1 Total number of bytes in SPD device 2 Fundamental memory type 3 Number ...

Page 16

DR, ECC) 240-Pin DDR2 SDRAM UDIMM Table 18: Serial Presence-Detect Matrix (continued) Byte Description 27 MIN row precharge time, 28 MIN row active-to-row active, 29 MIN RAS#-to-CAS# delay, 30 MIN active-to-precharge time, 31 Module rank ...

Page 17

DR, ECC) 240-Pin DDR2 SDRAM UDIMM Table 18: Serial Presence-Detect Matrix (continued) Byte Description 47–61 Optional features, not supported 62 SPD revision 63 Checksum for bytes 0–62 64 Manufacturer’s JEDEC ID code 65–71 Manufacturer’s JEDEC ...

Page 18

DR, ECC) 240-Pin DDR2 SDRAM UDIMM Module Dimensions Figure 3: 240-Pin DDR2 DIMM 2.00 (0.079) R (4X 2.50 (0.098) D (2X) 2.30 (0.091) TYP PIN 1 2.20 (0.087) TYP 1.0 (0.039) TYP 1.0 ...

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