MT5HTF6472PKY-40EA2 Micron Technology Inc, MT5HTF6472PKY-40EA2 Datasheet

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MT5HTF6472PKY-40EA2

Manufacturer Part Number
MT5HTF6472PKY-40EA2
Description
MODULE DDR2 512MB 244-DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT5HTF6472PKY-40EA2

Memory Type
DDR2 SDRAM
Memory Size
512MB
Speed
400MT/s
Package / Case
244-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DDR2 SDRAM Mini-RDIMM
MT5HTF3272(P)K – 256MB
For component data sheets, refer to Micron’s Web site:
Features
• 244-pin, mini-registered dual in-line memory
• Fast data transfer rates: PC-3200, PC2-4200, or
• Supports ECC error detection and correction
• 256MB (32 Meg x 72)
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Single rank
• Multiple internal device banks for concurrent
• Supports duplicate output strobe (RDQS/RDQS#)
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
Table 1:
PDF: 09005aef818e3e75/Source: 09005aef818e3df5
htf5c32x72k.fm - Rev. B 2/07 EN
module (mini-RDIMM)
PC2-5300
operation
Speed
Grade
DD
DDSPD
-667
-53E
-40E
= V
DD
= +1.7V to +3.6V
Q = +1.8V
Industry Nomenclature
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
PC2-5300
PC2-4200
PC2-3200
t
CK
CL = 5
667
Data Rate (MT/s)
www.micron.com
CL = 4
533
533
400
1
256MB: (x72, SR) 244-Pin DDR2 Mini-RDIMM
Figure 1:
Notes: 1. Contact Micron for industrial temperature
Options
• Parity
• Operating temperature
• Package
• Frequency/CAS latency
• PCB height
Module height: 30.0mm (1.18in)
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 244-pin mini-RDIMM (Pb-free)
– 3.0ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
– 5.0ns @ CL = 3 (DDR2-400)
– 30mm (1.18in)
CL = 3
400
400
400
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. CL = CAS (READ) latency; registered mode
module offerings.
will add one clock cycle to CL.
244-Pin Mini-RDIMM (MO-244 R/C B)
t
(ns)
RCD
15
15
15
A
A
1
≤ +85°C)
2
≤ +70°C)
©2005 Micron Technology, Inc. All rights reserved.
(ns)
t
15
15
15
RP
Marking
Features
None
-53E
-40E
-667
P
Y
I
(ns)
t
55
55
55
RC

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MT5HTF6472PKY-40EA2 Summary of contents

Page 1

DDR2 SDRAM Mini-RDIMM MT5HTF3272(P)K – 256MB For component data sheets, refer to Micron’s Web site: Features • 244-pin, mini-registered dual in-line memory module (mini-RDIMM) • Fast data transfer rates: PC-3200, PC2-4200, or PC2-5300 • Supports ECC error detection and correction ...

Page 2

Table 2: Addressing Refresh count Row addressing Device bank addressing Device page size per bank Device configuration Column addressing Module rank addressing Table 3: Part Numbers and Timing Parameters – 256MB Base device: MT47H32M16 Module 2 Part Number Density 256MB ...

Page 3

Pin Assignments and Descriptions Table 4: Pin Assignments 244-Pin Mini-RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol REF DQ24 DQ0 34 DQ25 65 4 DQ1 35 ...

Page 4

Table 5: Pin Descriptions Symbol Type ODT0 Input On-die termination: ODT (registered HIGH) enables termination resistance internal to the (SSTL_18) DDR2 SDRAM. When enabled, ODT is only applied to each of the following pins: DQ, DQS, DQS#, RDQS, RDQS#, CB, ...

Page 5

Table 5: Pin Descriptions (continued) Symbol Type V Supply Ground Supply Serial EEPROM positive power supply: +1.7V to +3.6V. DDSPD NC – No connect: These pins should be left unconnected. RFU – Reserved for future use. PDF: 09005aef818e3e75/Source: ...

Page 6

Functional Block Diagram Figure 2: Functional Block Diagram RS0# DQS0 DQS0# DM0 DQS1 DQS1# DM1 DQS2 DQS2# DM2 DQS3 DQS3# DM3 CK0 CK0# SCL S0# E BA0–BA1/BA2 G A0–A12 I RAS# CAS# S WE# ...

Page 7

... READs and by the memory controller during WRITEs. DQS is edge- aligned with data for READs and center-aligned with data for WRITEs. DDR2 SDRAM modules operate from a differential clock (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. ...

Page 8

... Simulations are significantly more accurate and realistic than a gross estimation of module capacitance when inductance and delay parameters associated with trace lengths are used in simulations. JEDEC modules are currently designed using simulations to close timing budgets. Component AC Timing and Operating Conditions Recommended AC operating conditions are given in the DDR2 component data sheets. Component specifications are available on Micron’ ...

Page 9

I Specifications DD Table 8: DDR2 I Specifications and Conditions – 256MB DD Values shown for MT47H32M16 DDR2 SDRAM only and are computed from values specified in the 512Mb (32 Meg x 16) component data sheet Parameter/Condition Operating one bank ...

Page 10

Register and PLL Specifications Table 9: Register Specifications SSTU32866 devices or equivalent JESD82-10 Parameter Symbol DC high-level input voltage DC low-level input voltage high-level IH AC ...

Page 11

Table 10: PLL Specifications CU877 device or equivalent JESD82-8.01 Parameter Symbol DC high-level input voltage V DC low-level input voltage V V Input voltage (limits high-level input voltage DC low-level input voltage V Input differential-pair cross V voltage ...

Page 12

Serial Presence-Detect Table 12: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input ...

Page 13

Table 14: Serial Presence-Detect Matrix Byte 0 Number of SPD bytes used by Micron 1 Total number of bytes in SPD device 2 Fundamental memory type 3 Number of row addresses on SDRAM 4 Number of column addresses on SDRAM ...

Page 14

Table 14: Serial Presence-Detect Matrix (continued) Byte 32 Address and command setup time, 33 Address and command hold time, 34 Data/data mask input setup time, 35 Data/data mask input hold time Write recovery time WRITE-to-READ command ...

Page 15

Module Dimensions Figure 3: 244-Pin DDR2 Mini-RDIMM 2.0 (0.079 1.0 (0.039 1.80 (0.071 6.0 (0.236) TYP 1.0 (0.039) 0.60 (0.024) TYP PIN 1 TYP 2.0 (0.079) TYP 42.9 (1.689) TYP No DRAM devices ...

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