MT16HTF25664AY-667EA3 Micron Technology Inc, MT16HTF25664AY-667EA3 Datasheet - Page 19
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MT16HTF25664AY-667EA3
Manufacturer Part Number
MT16HTF25664AY-667EA3
Description
MODULE DDR2 2GB 200SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT16HTF6464AY-667B4.pdf
(21 pages)
Specifications of MT16HTF25664AY-667EA3
Memory Type
DDR2 SDRAM
Memory Size
2GB
Speed
667MT/s
Package / Case
200-SODIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 15:
PDF: 09005aef80f09084/Source: 09005aef80f09068
HTF16C64_128_256x64AG.fm - Rev. D 5/06 EN
99-127 Manufacturer-specific data (RSVD)
65-71 Manufacturer’s JEDEC ID code
73-90 Module part number (ASCII)
95-98 Module serial number
Byte
64
72
91
92
93
94
Manufacturer’s JEDEC ID code
Manufacturing location
PCB identification code
Identification code (continued)
Year of manufacture in BCD
Week of manufacture in BCD
Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; table notes located on page 19
Notes:
Description
1. The
specification is
t
RAS SPD value shown is based on the JEDEC standard value of 45ns; the actual device
512MB, 1GB, 2GB: (x64, DR) 240-Pin DDR2 SDRAM UDIMM
t
RAS = 40ns.
Entry (Version)
(Continued)
MICRON
01–12
1–9
0
19
MT16HTF6464A MT16HTF12864A MT16HTF25664A
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Variable data
Variable data
Variable data
Variable data
01–0C
01–09
2C
00
FF
–
Variable data
Variable data
Variable data
Variable data
Serial Presence-Detect
01–0C
01–09
2C
00
FF
©2003 Micron Technology, Inc. All rights reserved.
–
Variable data
Variable data
Variable data
Variable data
01–0C
01–09
2C
00
FF
–