MT18HTF25672FY-667A5D3 Micron Technology Inc, MT18HTF25672FY-667A5D3 Datasheet - Page 12

• Manufacturer Part Number: MT18HTF25672FY-667A5D3
• Description: MODULE DDR2 2GB 240FBDIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18HTF25672FY-667A5D3

• Memory Type: DDR2 SDRAM
• Memory Size: 2GB
• Speed: 667MT/s
• Package / Case: 240-FBDIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240FBDIMM
• Device Core Size: 72b
• Organization: 256Mx72
• Total Density: 2GByte
• Chip Density: 1Gb
• Package Type: FBDIMM
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 3mA
• Number Of Elements: 18
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 95C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 19:
pdf: 09005aef81a2f214/source: 09005aef81a2f22d
HTF18C64_128_256x72F.fm - Rev. B 9/07 EN
Byte
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
0
1
2
3
4
5
6
7
8
9
Description
CRC range
SPD bytes total
Bytes used
SPD revision
Key byte/DRAM device type
Voltage levels of this assembly
SDRAM addressing: Device rows/columns/banks
Module physical attributes: Height/thickness
Module type
Module organization: Module ranks/SDRAM device width (I/O)
Fine time-base dividend and divisor
Medium time-base dividend
Medium time-base divisor
SDRAM MIN cycle time (
SDRAM MAX cycle time (
SDRAM CLs supported: -53E CL = 4, 3; -667 CL = 5, 4, 3;
-80E CL = 5, 4
SDRAM MIN CL time (
SDRAM WRITE recovery times supported
SDRAM WRITE recovery time (
SDRAM WRITE latencies supported
SDRAM additive latencies supported
SDRAM MIN RAS-to-CAS delay (
SDRAM MIN row active-to-row active delay (
SDRAM MIN row precharge time (
SDRAM upper nibbles for
SDRAM MIN active-to-precharge time (
SDRAM MIN auto refresh-to-active/auto refresh time (
SDRAM minimum AUTO REFRESH-to-ACTIVE/AUTO REFRESH
command period (
SDRAM minimum AUTO REFRESH-to-ACTIVE/AUTO REFRESH
command period (
SDRAM internal WRITE-to-READ command delay (
SDRAM internal READ-to-PRECHARGE command delay (
SDRAM burst lengths supported
SDRAM drivers/terminations supported: 03 = 75Ω and 100Ω;
07 = 50Ω, 75Ω, and 100Ω
Drivers supported
SDRAM refresh rate (
Serial Presence-Detect Matrix – SDRAM Device and Module
t
t
RFC-LSB)
RFC-MSB)
t
t
REFI), 95°C support and double refresh
CAS)
t
CK [MIN])
t
CK [MAX])
t
RAS and
t
WR)
t
RCD)
t
RP)
t
RC
t
RAS)
1GB, 2GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM
t
RRD)
t
12
WTR)
t
RC)
t
RTP)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
15ns(-667/-53E )
-667/-53E (15ns)
DDR2 FBDIMM
30mm/7.16mm
Single rank/x4
127.5ns (2GB)
Weak drivers
12.5ns (-80E)
-80E (12.5ns)
Bytes 0–116/
4 or 8 banks
DRAM/AMB
Revision 1.1
1/4 = 0.25ns
1/4 = 0.25ns
Range, MIN
Range, MIN
Range, MIN
105ns (1GB)
11 columns
256 bytes/
176 bytes
-80E/-667
FBDIMM
14 rows
Entry
5.0ps
7.5ns
7.5ns
7.5ns
7.8µs
15ns
15ns
44ns
55ns
-80E
-667
-53E
-80E
-667
-53E
-53E
4, 8
8ns
–
Serial Presence-Detect
©2005 Micron Technology, Inc. All rights reserved.
1GB
0A
DC
A4
0C
3C
3C
3C
3C
B4
C2
92
11
09
12
48
23
07
08
51
01
04
0F
20
24
33
23
22
42
40
32
1E
32
00
01
1E
1E
03
07
03
01
2GB
0A
DC
0C
3C
3C
3C
3C
B4
C2
92
11
09
12
49
23
07
08
51
01
04
0F
20
24
33
23
22
42
40
32
1E
32
00
FE
01
1E
1E
03
07
03
01